RN1307(TE85L,F)
TOSHIBA
Images are for reference only.
Please see Product Specifications
for details.
Documents
Product Specifications
| Category | Discrete semiconductors Discrete single Pre-Biased |
| Manufacturer | TOSHIBA |
| Series | - |
| Transistor Type | NPN - Pre-Bias |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Current - Collector Cutoff (Max) | 500 nA |
| Current - Collector (Ic) (Max) | 100 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA/5V |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Resistor - Base (R1) | 10 kOhms |
| Power - Max | 0.1 W |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250μA/ 5mA |
| Mounting Type | Surface Mount |
| Device Package | USM |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
