RJH65T14DPQ-A0#T0
RENESAS
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Please see Product Specifications
for details.
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Product Specifications
| Category | Discrete semiconductors Single |
| Manufacturer | RENESAS |
| IGBT Type | Trench |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 100 A |
| Power - Max | 250 W |
| Td (on/off) @ 25°C | 38ns/125ns |
| Vce(on) (Max) @ Vge, Ic | 1.75V @ 15V, 50A |
| Gate Charge | 80 nC |
| Switching Energy | 1.3mJ (on), 1.2mJ (off) |
| Test Condition | 400V, 50A, 10Ohms, 15V |
| Operating Temperature Range | 175°C(TJ) |
| Mounting Type | Through Hole |
| Device Package | TO-247-3 |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
In Stock: 700
MOQ:25
SPQ:25
