RD3P05BATTL1

RD3P05BATTL1_製品イメージ01

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Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerROHM
FET TypeP-Channel
Drain to Source Voltage (Vdss)100V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C50A(Tc)
Input Capacitance (Ciss) (Max) @ Vds4620pF @ 50 V
Power Dissipation (Max)101W(Tc)
Rds On (Max) @ Id, Vgs41mOhms @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Vgs (Max)±20V
TechnologyMosfet (Metal Oxide)
Operating Temperature Range150°C(TJ)
Mounting TypeSurface Mount
Device PackageTO-252

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 2,086

MOQ:1

SPQ:1

Scheduled Incoming Stock (back-order): 0

Quantity

Unit Price Total
QuantityUnit Price
1 - 9 $2.04
10 - 49 $1.346
50 - 99 $0.873
100 - 299 $0.813
300 - 499 $0.774
500 - 999 $0.766
1,000 - 1,999 $0.76
2,000 - $0.757

Alternative Part Number(s)