MBRD835LG
ON SEMICONDUCTOR
Documents
Product Specifications
Average Rectified Current | 8 A |
Breakdown Voltage | 35 V |
Case/Package | DPAK |
Contact Plating | Tin |
Current Rating | 8 A |
Element Configuration | Single |
Forward Current | 8 A |
Forward Voltage | 510 mV |
Halogen Free | Halogen Free |
Height | 2.38 mm |
Lead Free | Lead Free |
Lifecycle Status | EOL (Last Updated: 10 months ago) |
Manufacturer Lifecycle Status | LAST SHIPMENTS (Last Updated: 10 months ago) |
Max Forward Surge Current (Ifsm) | 75 A |
Max Operating Temperature | 150 °C |
Max Repetitive Reverse Voltage (Vrrm) | 35 V |
Max Reverse Leakage Current | 1.4 mA |
Max Reverse Voltage (DC) | 35 V |
Max Surge Current | 75 A |
Min Operating Temperature | -65 °C |
Number of Pins | 3 |
Output Current | 8 A |
Peak Non-Repetitive Surge Current | 75 A |
Peak Reverse Current | 1.4 mA |
Polarity | Standard |
Radiation Hardening | No |
REACH SVHC | No |
Schedule B | 8541100080, 8541100080|8541100080|8541100080|8541100080|8541100080|8541100080|8541100080|8541100080|8541100080|8541100080|8541100080|8541100080|8541100080|8541100080|8541100080|8541100080|8541100080|8541100080|8541100080|8541100080|8541100080|8541100080|8541100080|85 |
Voltage Rating (DC) | 35 V |
Width | 6.22 mm |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.