IRF830
ST MICROELECTRONICS
Images are for reference only.
Please see Product Specifications
for details.
Documents
Product Specifications
| Case/Package | TO-220-3 |
| Continuous Drain Current (ID) | 4.5 A |
| Current Rating | 4.5 A |
| Drain to Source Breakdown Voltage | 500 V |
| Drain to Source Resistance | 1.5 Ω |
| Drain to Source Voltage (Vdss) | 500 V |
| Element Configuration | Single |
| Fall Time | 5 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 610 pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 100 W |
| Min Operating Temperature | -65 °C |
| Mount | Through Hole |
| Power Dissipation | 100 W |
| Radiation Hardening | No |
| Rds On Max | 1.5 Ω |
| Rise Time | 8 ns |
| Turn-On Delay Time | 11.5 ns |
| Voltage Rating (DC) | 500 V |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
