IRF8010PBF
INFINEON
Images are for reference only.
Please see Product Specifications
for details.
Documents
Product Specifications
| Category | Discrete semiconductors Discrete single |
| Manufacturer | INFINEON |
| Series | HEXFETR |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 80A(Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 3830pF @ 25 V |
| Power Dissipation (Max) | 260W(Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhms @ 45A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±20V |
| Technology | Mosfet (Metal Oxide) |
| FET Feature | Standard |
| Operating Temperature Range | -55°C ~ 175°C(TJ) |
| Mounting Type | Through Hole |
| Device Package | TO-220AB |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
In Stock: 760
MOQ:140
SPQ:10
| Quantity | Unit Price | |
|---|---|---|
| 140 - 1,399 | $1.305 | |
| 1,400 - 6,999 | $1.282 | |
| 7,000 - 13,999 | $1.274 | |
| 14,000 - 69,999 | $1.267 | |
| 70,000 - 139,999 | $1.266 | |
| 140,000 - | $1.263 | |
| - | - | |
| - | - | |
