IRF5210PBF
INFINEON
Documents
Product Specifications
Category | Discrete semiconductors Discrete single |
Manufacturer | INFINEON |
Series | HEXFETR |
FET Type | P-Channel |
Drain to Source Voltage (Vdss) | 100V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Current - Continuous Drain (Id) @ 25°C | 40A(Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 2700pF @ 25 V |
Power Dissipation (Max) | 200W(Tc) |
Rds On (Max) @ Id, Vgs | 60mOhms @ 24A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Vgs (Max) | ±20V |
Technology | Mosfet (Metal Oxide) |
FET Feature | Standard |
Operating Temperature Range | -55°C ~ 175°C(TJ) |
Mounting Type | Through Hole |
Device Package | TO-220AB |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
In Stock: 2,150
MOQ:50
SPQ:50
Quantity | Unit Price | |
---|---|---|
50 - 149 | $1.598 | |
150 - 249 | $1.438 | |
250 - 499 | $1.338 | |
500 - 999 | $1.199 | |
1,000 - | $1.151 | |
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