IRF1010NPBF
INFINEON
Documents
Product Specifications
Category | Discrete semiconductors Discrete single |
Manufacturer | INFINEON |
Series | HEXFETR |
FET Type | N-Channel |
Drain to Source Voltage (Vdss) | 55V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Current - Continuous Drain (Id) @ 25°C | 85A(Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 3210pF @ 25 V |
Power Dissipation (Max) | 180W(Tc) |
Rds On (Max) @ Id, Vgs | 11mOhms @ 43A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Vgs (Max) | ±20V |
Technology | Mosfet (Metal Oxide) |
Operating Temperature Range | -55°C ~ 175°C(TJ) |
Mounting Type | Through Hole |
Device Package | TO-220AB |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
In Stock: 323
MOQ:150
SPQ:10
Quantity | Unit Price | |
---|---|---|
150 - 1,499 | $1.207 | |
1,500 - 7,499 | $1.187 | |
7,500 - 14,999 | $1.178 | |
15,000 - 74,999 | $1.172 | |
75,000 - 149,999 | $1.17 | |
150,000 - 299,999 | $1.167 | |
300,000 - | $1.166 | |
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