HT8KC6TB1

HT8KC6TB1_製品イメージ01

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Please see Product Specifications
for details.


Product Specifications

CategoryDiscrete semiconductors
ManufacturerROHM
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C6.5A(TA), 15A(Tc)
Input Capacitance (Ciss) (Max) @ Vds460pF @ 30V
Power - Max2W(Ta), 14W(Tc)
Rds On (Max) @ Id, Vgs29mOhms @ 6.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate charge (Qg) when Vgs is applied (max)7.6nC @ 10V
TechnologyMOSFET (Metal Oxide)
Configuration2 Nチャネル
Operating Temperature Range150°C(TJ)
Mounting TypeSurface Mount
Device Package8-HSMT(3.2x3)

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 2

MOQ:1

SPQ:1

Scheduled Incoming Stock (back-order): 0

Quantity

Unit Price Total
QuantityUnit Price
1 - 19 $1.209
20 - 49 $0.743
50 - 99 $0.565
100 - 299 $0.506
300 - 499 $0.467
500 - 999 $0.459
1,000 - 3,999 $0.453
4,000 - $0.449

Alternative Part Number(s)