EE-SX1070

Images are for reference only.
Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

Ambient Temperature Range High95 °C
Collector Emitter Breakdown Voltage30 V
Collector Emitter Voltage (VCEO)30 V
Contact PlatingZinc
Fall Time4 µs
Forward Current30 mA
Forward Voltage1.2 V
Height10.8 mm
Input Current30 mA
Lead FreeLead Free
Lifecycle StatusProduction (Last Updated: 5 years ago)
Max Collector Current20 mA
Max Input Current30 mA
Max Operating Temperature95 °C
Min Operating Temperature-25 °C
MountPCB , Through Hole
Number of Channels1
Number of Elements1
Number of Pins4
Output ConfigurationPhototransistor
Output Voltage30 V
PackagingBulk
Power Dissipation100 mW
REACH SVHCUnknown
Response Time4 µs
Reverse Breakdown Voltage4 V
Reverse Voltage4 V
Reverse Voltage (DC)4 V
Rise Time4 µs
Schedule B8541408000, 8541408000|8541408000, 8541408000|8541408000|8541408000, 8541408000|8541408000|8541408000|8541408000
Sensing Distance8 mm
TerminationSolder
Wavelength940 nm
Width500 µm

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 70

MOQ:96

SPQ:1


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