EE-SX1070
OMRON
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Please see Product Specifications
for details.
Documents
Product Specifications
Ambient Temperature Range High | 95 °C |
Collector Emitter Breakdown Voltage | 30 V |
Collector Emitter Voltage (VCEO) | 30 V |
Contact Plating | Zinc |
Fall Time | 4 µs |
Forward Current | 30 mA |
Forward Voltage | 1.2 V |
Height | 10.8 mm |
Input Current | 30 mA |
Lead Free | Lead Free |
Lifecycle Status | Production (Last Updated: 5 years ago) |
Max Collector Current | 20 mA |
Max Input Current | 30 mA |
Max Operating Temperature | 95 °C |
Min Operating Temperature | -25 °C |
Mount | PCB , Through Hole |
Number of Channels | 1 |
Number of Elements | 1 |
Number of Pins | 4 |
Output Configuration | Phototransistor |
Output Voltage | 30 V |
Packaging | Bulk |
Power Dissipation | 100 mW |
REACH SVHC | Unknown |
Response Time | 4 µs |
Reverse Breakdown Voltage | 4 V |
Reverse Voltage | 4 V |
Reverse Voltage (DC) | 4 V |
Rise Time | 4 µs |
Schedule B | 8541408000, 8541408000|8541408000, 8541408000|8541408000|8541408000, 8541408000|8541408000|8541408000|8541408000 |
Sensing Distance | 8 mm |
Termination | Solder |
Wavelength | 940 nm |
Width | 500 µm |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
In Stock: 70
MOQ:96
SPQ:1