BSM180C12P3C202
ROHM
RoHS Status:RoHS
Packing Type:bulk
COO:JP
Lifecycle Status:Production (Last Updated: 4 years ago)
Documents
Product Specifications
Category | Discrete semiconductors Discrete single |
Manufacturer | ROHM |
FET Type | N-Channel |
Drain to Source Voltage (Vdss) | 1200V |
Current - Continuous Drain (Id) @ 25°C | 180A(Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 9000pF @ 10 V |
Power Dissipation (Max) | 880W(Tc) |
Vgs(th) (Max) @ Id | 5.6V @ 50mA |
Vgs (Max) | +22V, -4V |
Technology | Sicfet (Silicon Carbide) |
Operating Temperature Range | -40°C ~ 150°C(TJ) |
Mounting Type | Chassis Mount |
Device Package | Module |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
In Stock: 12
MOQ:1
SPQ:1
Scheduled Incoming Stock (back-order): 0
Quantity | Unit Price | |
---|---|---|
1 - 1 | $389.637 | |
2 - 2 | $386.678 | |
3 - 3 | $385.692 | |
4 - 5 | $385.199 | |
6 - 9 | $384.705 | |
10 - 31 | $384.311 | |
32 - | $383.904 | |
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