BCR158E6327HTSA1
INFINEON
Documents
Product Specifications
Category | Discrete semiconductors Discrete single Pre-Biased |
Manufacturer | INFINEON |
Transistor Type | PNP - Pre-Bias |
Voltage - Collector Emitter Breakdown (Max) | 50 V |
Current - Collector Cutoff (Max) | 100 nA(ICBO) |
Current - Collector (Ic) (Max) | 100 mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA/5V |
Resistor - Emitter Base (R2) | 47 kOhms |
Resistor - Base (R1) | 2.2 kOhms |
Power - Max | 200 mW |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA/10mA |
Mounting Type | Surface Mount |
Device Package | PG-SOT23 |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
In Stock: 9,000
MOQ:3,000
SPQ:3,000
Quantity | Unit Price | |
---|---|---|
3,000 - 5,999 | $0.072 | |
6,000 - 8,999 | $0.068 | |
9,000 - 14,999 | $0.066 | |
15,000 - 23,999 | $0.063 | |
24,000 - | $0.059 | |
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