BCR158E6327HTSA1

BCR158E6327HTSA1_製品イメージ01

Images are for reference only.
Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerINFINEON
Transistor TypePNP - Pre-Bias
Voltage - Collector Emitter Breakdown (Max)50 V
Current - Collector Cutoff (Max)100 nA(ICBO)
Current - Collector (Ic) (Max)100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 5mA/5V
Resistor - Emitter Base (R2)47 kOhms
Resistor - Base (R1)2.2 kOhms
Power - Max200 mW
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA/10mA
Mounting TypeSurface Mount
Device PackagePG-SOT23

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 9,000

MOQ:3,000

SPQ:3,000

Quantity

Unit Price Total
QuantityUnit Price
3,000 - 5,999 $0.072
6,000 - 8,999 $0.068
9,000 - 14,999 $0.066
15,000 - 23,999 $0.063
24,000 - $0.059
--
--
--

Alternative Part Number(s)

BC857C-7-F

Diodes Inc.

BC856B-7-F

Diodes Inc.

KSA812YMTF

onsemi

BC857AMTF

onsemi

BC856CMTF

onsemi