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4N25
Images are for reference only.
Please see Product Specifications
for details.
Documents
Product Specifications
| Approvals | UL, VDE |
| Case/Package | PDIP |
| Collector Emitter Breakdown Voltage | 30 V |
| Collector Emitter Saturation Voltage | 500 mV |
| Collector Emitter Voltage (VCEO) | 30 V |
| Contact Plating | Tin |
| Current Transfer Ratio | 50 % |
| Fall Time | 2 s |
| Forward Current | 60 mA |
| Forward Voltage | 1.3 V |
| Height | 4.8 mm |
| Input Current | 50 mA |
| Isolation Voltage | 5 kV |
| Lead Free | Lead Free |
| Max Collector Current | 100 mA |
| Max Input Current | 60 mA |
| Max Junction Temperature (Tj) | 125 °C |
| Max Operating Temperature | 100 °C |
| Max Output Voltage | 30 V |
| Max Power Dissipation | 150 mW |
| Min Operating Temperature | -55 °C |
| Mount | PCB , Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 6 |
| Output Current per Channel | 50 mA |
| Power Dissipation | 150 mW |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| Reverse Breakdown Voltage | 5 V |
| Rise Time | 2 s |
| Schedule B | 8541408000, 8541408000|8541408000, 8541408000|8541408000|8541408000, 8541408000|8541408000|8541408000|8541408000 |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
In Stock: 3,700
MOQ:50
SPQ:50
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| 50 - | $0.00 | |
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