2SD1691-AZ
RENESAS
Images are for reference only.
Please see Product Specifications
for details.
Product Specifications
| Category | Discrete semiconductors Discrete single |
| Manufacturer | RENESAS |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Maximum) | 60 V |
| Current - Collector Interrupt (max) | 10 µA(ICBO) |
| Current - Collector (Ic) (Max) | 5.0 A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A/1V |
| Power - Maximum | 1.3 W |
| Vce saturation (max) @lb, Ic | 300mV@200mA/2A |
| Operating Temperature Range | 150°C(TJ) |
| Mounting Type | Through Hole |
| Device Package | TO-126 |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
