2SC5199-O(Q)

2SC5199-O(Q)_製品イメージ01

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Please see Product Specifications
for details.


Product Specifications

CategoryDiscrete semiconductors
ManufacturerTOSHIBA
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Maximum)160 V
Current - Collector (Ic) (Max)12.0 A
DC Current Gain (hFE) (Min) @ Ic, Vce55
Vce saturation (max) @lb, Ic2.5V
Mounting TypeThrough Hole
Device PackageTO-3P(L)

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 200

MOQ:1

SPQ:1

Scheduled Incoming Stock (back-order): 0

Quantity

Unit Price Total
QuantityUnit Price
1 - 9 $3.225
10 - 29 $1.784
30 - 49 $1.39
50 - 99 $1.311
100 - 299 $1.252
300 - 499 $1.212
500 - 999 $1.204
1,000 - $1.198

Alternative Part Number(s)