2SC2712-O(TE85L,F)

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Please see Product Specifications
for details.


Product Specifications

CategoryDiscrete semiconductors
ManufacturerTOSHIBA
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Maximum)50 V
Current - Collector Interrupt (max)100 nA(ICBO)
Current - Collector (Ic) (Max)150 mA
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 2mA/6V
Frequency-transition80MHz
Power - Maximum150 mW
Vce saturation (max) @lb, Ic250mV@10mA/100mA
Product OverviewTRANS NPN 50V 0.15A TO236
Operating Temperature Range125°C(TJ)
Mounting TypeSurface Mount
Device PackageTO-236

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 0

0 In Stock

MOQ:1

SPQ:1

Scheduled Incoming Stock (back-order): 3,000


Alternative Part Number(s)

2PD601AR,115

NXP Semiconductors

2SC2712-Y,LF

Toshiba

RN1409(TE85L,F)

Toshiba

2SC2712-GR,LF

Toshiba

BC817-16

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