2SA1942-O(Q)
TOSHIBA
Images are for reference only.
Please see Product Specifications
for details.
Product Specifications
| Category | Discrete semiconductors Discrete single |
| Manufacturer | TOSHIBA |
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Maximum) | -160 V |
| Current - Collector (Ic) (Max) | -12 A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 55 |
| Vce saturation (max) @lb, Ic | -2.5V |
| Mounting Type | Through Hole |
| Device Package | TO-3P(L) |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
