RQ3E180BNTB

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Please see Product Specifications
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Product Specifications

CategoryDiscrete semiconductors
ManufacturerROHM
FET TypeN-Channel
Drain to Source Voltage (Vdss)30V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C39A(Tc)
Input Capacitance (Ciss) (Max) @ Vds3500pF @ 15 V
Power Dissipation (Max)2W(Ta), 20W(Tc)
Rds On (Max) @ Id, Vgs3.9mOhms @ 18A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Vgs (Max)±20V
TechnologyMosfet (Metal Oxide)
Operating Temperature Range-55°C ~ 150°C(TJ)
Mounting TypeSurface Mount
Device Package8-HSMT(3.2x3)

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 3,575

MOQ:1

SPQ:1

Scheduled Incoming Stock (back-order): 0

Quantity

Unit Price Total
QuantityUnit Price
1 - 19 $0.672
20 - 49 $0.544
50 - 99 $0.367
100 - 299 $0.308
300 - 499 $0.268
500 - 999 $0.26
1,000 - 3,999 $0.254
4,000 - $0.25

Alternative Part Number(s)