2SK2009(TE85L,F)
TOSHIBA
Images are for reference only.
Please see Product Specifications
for details.
Product Specifications
| Category | Discrete semiconductors Discrete single |
| Manufacturer | TOSHIBA |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V |
| Current - Continuous Drain (Id) @ 25°C | 200mA(TA) |
| Input Capacitance (Ciss) (Max) @ Vds | 70 pF @ 3 V |
| Power Dissipation (Max) | 200mW(Ta) |
| Rds On (Max) @ Id, Vgs | 2Ohms @ 50MA, 2.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 100μA |
| Gate Charge (Qg) (Max) @ Vgs | ±20V |
| Vgs (Max) | ±20V |
| Operating Temperature Range | 150°C(TJ) |
| Mounting Type | Surface Mount |
| Device Package | SC-59-3 |
| Technology | Mosfet (Metal Oxide) |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
In Stock: 2,290
MOQ:1
SPQ:1
Scheduled Incoming Stock (back-order): 0
| Quantity | Unit Price | |
|---|---|---|
| 1 - 49 | $0.487 | |
| 50 - 99 | $0.331 | |
| 100 - 299 | $0.264 | |
| 300 - 499 | $0.219 | |
| 500 - 999 | $0.21 | |
| 1,000 - 3,999 | $0.203 | |
| 4,000 - 4,999 | $0.198 | |
| 5,000 - | $0.198 | |
