2SC4083T106N

2SC4083T106N_製品イメージ01

Images are for reference only.
Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

Case/PackageSC
Collector Base Voltage (VCBO)20 V
Collector Emitter Breakdown Voltage11 V
Collector Emitter Voltage (VCEO)11 V
Contact PlatingCopper, Silver, Tin
Continuous Collector Current50 mA
Current Rating50 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)3 V
Gain Bandwidth Product3.2 GHz
hFE Min56
Lead FreeLead Free
Max Breakdown Voltage11 V
Max Collector Current50 mA
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
MountSurface Mount
Number of Pins3
PackagingDigi-Reel®
PolarityNPN
Power Dissipation200 mW
Radiation HardeningNo
Schedule B8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
Transition Frequency3.2 GHz
Voltage Rating (DC)11 V

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 4,257

MOQ:1

SPQ:1

Scheduled Incoming Stock (back-order): 0

Quantity

Unit Price Total
QuantityUnit Price
1 - 99 $0.189
100 - 299 $0.159
300 - 499 $0.099
500 - 999 $0.089
1,000 - 3,999 $0.08
4,000 - 4,999 $0.072
5,000 - 9,999 $0.072
10,000 - $0.071

Alternative Part Number(s)

MSD1328-RT1G

onsemi

PDTC144WE,115

NXP Semiconductors