2SC5354-1(F)
TOSHIBA
Images are for reference only.
Please see Product Specifications
for details.
Product Specifications
| Category | Discrete semiconductors Discrete single |
| Manufacturer | TOSHIBA |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Maximum) | 800 V |
| Current - Collector (Ic) (Max) | 5.0 A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 1mA/5V |
| Power - Maximum | 100 W |
| Vce saturation (max) @lb, Ic | 1V@400mA/2A |
| Mounting Type | Through Hole |
| Device Package | TO-3P(N) |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
In Stock: 0
MOQ:1
SPQ:1
Scheduled Incoming Stock (back-order): 500
