SI7850DP-T1-E3
VISHAY
Images are for reference only.
Please see Product Specifications
for details.
Documents
Product Specifications
| Case/Package | SOIC |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 6.2 A |
| Drain to Source Breakdown Voltage | 60 V |
| Drain to Source Resistance | 18 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| Dual Supply Voltage | 60 V |
| Element Configuration | Single |
| Fall Time | 10 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Height | 1.17 mm |
| Lead Free | Lead Free |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 1.8 W |
| Manufacturer Package Identifier | S17-0173-Single |
| Min Operating Temperature | -55 °C |
| Mount | Surface Mount |
| Nominal Vgs | 3 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 8 |
| Packaging | Cut Tape |
| Power Dissipation | 1.8 W |
| Radiation Hardening | No |
| Rds On Max | 22 mΩ |
| REACH SVHC | Unknown |
| Resistance | 22 mΩ |
| Rise Time | 10 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Termination | SMD/SMT |
| Threshold Voltage | 3 V |
| Turn-Off Delay Time | 25 ns |
| Turn-On Delay Time | 10 ns |
| Width | 5.89 mm |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
In Stock: 2,960
MOQ:1
SPQ:1
Scheduled Incoming Stock (back-order): 0
| Quantity | Unit Price | |
|---|---|---|
| 1 - 9 | $2.692 | |
| 10 - 29 | $1.587 | |
| 30 - 49 | $1.193 | |
| 50 - 99 | $1.114 | |
| 100 - 299 | $1.055 | |
| 300 - 499 | $1.015 | |
| 500 - 999 | $1.007 | |
| 1,000 - | $1.001 | |
