HP8ME5TB1

HP8ME5TB1_製品イメージ01

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Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerROHM
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C3A(TA), 8.5A(Tc), 3A(TA), 8A(Tc)
Input Capacitance (Ciss) (Max) @ Vds90pF @ 50V, 590pF @ 50V
Power - Max3W(Ta), 20W(Tc)
Rds On (Max) @ Id, Vgs193mOhms @ 3A, 10V, 273mOhms @ 3A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate charge (Qg) when Vgs is applied (max)2.9nC @ 10V, 19.7nC @ 10V
TechnologyMOSFET (Metal Oxide)
ConfigurationNおよびPチャンネル
Operating Temperature Range150°C(TJ)
Mounting TypeSurface Mount
Device Package8-HSOP

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 2,314

MOQ:1

SPQ:1

Scheduled Incoming Stock (back-order): 0

Quantity

Unit Price Total
QuantityUnit Price
1 - 19 $1.108
20 - 49 $0.706
50 - 99 $0.528
100 - 299 $0.469
300 - 499 $0.43
500 - 999 $0.422
1,000 - 3,999 $0.416
4,000 - $0.411

Alternative Part Number(s)