HT8KE6TB1

HT8KE6TB1_製品イメージ01

Images are for reference only.
Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerROHM
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C4.5A(TA), 13A(Tc)
Input Capacitance (Ciss) (Max) @ Vds305pF / 50V
Power - Max2W(Ta), 14W(Tc)
Rds On (Max) @ Id, Vgs57mOhms @ 4.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate charge (Qg) when Vgs is applied (max)6.7nC @ 10V
TechnologyMOSFET (Metal Oxide)
Configuration2 Nチャネル
Operating Temperature Range150°C(TJ)
Mounting TypeSurface Mount
Device Package8-HSMT(3.2x3)

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 50

MOQ:1

SPQ:1

Scheduled Incoming Stock (back-order): 0

Quantity

Unit Price Total
QuantityUnit Price
1 - 19 $1.257
20 - 49 $0.761
50 - 99 $0.583
100 - 299 $0.524
300 - 499 $0.485
500 - 999 $0.477
1,000 - 3,999 $0.471
4,000 - $0.466

Alternative Part Number(s)