R6511ENXC7G
ROHM
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Please see Product Specifications
for details.
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Product Specifications
| Category | Discrete semiconductors Discrete single |
| Manufacturer | ROHM |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 11A(TA) |
| Input Capacitance (Ciss) (Max) @ Vds | 670pF @ 25 V |
| Power Dissipation (Max) | 53W(Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhms @ 3.8A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 320µA |
| Vgs (Max) | ±20V |
| Technology | Mosfet (Metal Oxide) |
| Operating Temperature Range | 150°C(TJ) |
| Mounting Type | Through Hole |
| Device Package | TO-220FM |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
In Stock: 1,000
MOQ:1
SPQ:1
Scheduled Incoming Stock (back-order): 0
| Quantity | Unit Price | |
|---|---|---|
| 1 - 9 | $2.324 | |
| 10 - 49 | $1.451 | |
| 50 - 99 | $0.978 | |
| 100 - 299 | $0.919 | |
| 300 - 499 | $0.879 | |
| 500 - 999 | $0.871 | |
| 1,000 - 1,999 | $0.865 | |
| 2,000 - | $0.862 | |
