SSM6N815R,LF(B

Images are for reference only.
Please see Product Specifications
for details.


Product Specifications

CategoryDiscrete semiconductors
ManufacturerTOSHIBA
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C2A
Input Capacitance (Ciss) (Max) @ Vds290pF
Power - Max1.4W
Rds On (Max) @ Id, Vgs0.18Ohms@4V [email protected] 0.103Ohms@10V
Gate charge (Qg) when Vgs is applied (max)3.1nC
ConfigurationMOSFET Nch×2
Mounting TypeSurface Mount
Device PackageTSOP6F

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 3,000

MOQ:1

SPQ:1

Scheduled Incoming Stock (back-order): 0

Quantity

Unit Price Total
QuantityUnit Price
1 - 49 $0.359
50 - 99 $0.251
100 - 299 $0.192
300 - 499 $0.152
500 - 999 $0.145
1,000 - 3,999 $0.139
4,000 - 4,999 $0.134
5,000 - $0.134

Alternative Part Number(s)