BSM180C12P2E202
ROHM
RoHS Status:RoHS
Packing Type:bulk
COO:JP
Lifecycle Status:Production (Last Updated: 5 years ago)
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Please see Product Specifications
for details.
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Product Specifications
| Category | Discrete semiconductors Discrete single |
| Manufacturer | ROHM |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1200V |
| Current - Continuous Drain (Id) @ 25°C | 204A(Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 20000pF @ 10 V |
| Power Dissipation (Max) | 1360W(Tc) |
| Vgs(th) (Max) @ Id | 4V @ 35.2mA |
| Vgs (Max) | +22V, -6V |
| Technology | Sicfet (Silicon Carbide) |
| Operating Temperature Range | 175°C(TJ) |
| Mounting Type | Chassis Mount |
| Device Package | Module |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
In Stock: 4
MOQ:1
SPQ:1
Scheduled Incoming Stock (back-order): 0
| Quantity | Unit Price | |
|---|---|---|
| 1 - 1 | $409.833 | |
| 2 - 2 | $406.874 | |
| 3 - 3 | $405.888 | |
| 4 - 5 | $405.394 | |
| 6 - 12 | $404.901 | |
| 13 - | $404.37 | |
| - | - | |
| - | - | |
