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Semiconductors > Discrete semiconductors >
FETs

套用的篩選條件：

點擊數24～ / 型號名稱： / 狀態：全部 / 數量：0PCS~

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庫存所在位置	型號 / 製造商 / 其他	資訊核友管理編號	Manufacturer	Series	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	FET Feature	Operating Temperature Range	Mounting Type	Device Package
Partner Stock	2N6660 VISHAY SILICONIX	N-Channel 60 V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-205AD (TO-39)	Vishay Siliconix	-	N-Channel	60 V	5V, 10V	990mA (Tc)	50 pF @ 25 V	725mW (Ta), 6.25W (Tc)	3Ohm @ 1A, 10V	2V @ 1mA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Through Hole	TO-205AD (TO-39)
Partner Stock	2N6660-2 VISHAY SILICONIX	N-Channel 60 V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-205AD (TO-39)	Vishay Siliconix	-	N-Channel	60 V	5V, 10V	990mA (Tc)	50 pF @ 25 V	725mW (Ta), 6.25W (Tc)	3Ohm @ 1A, 10V	2V @ 1mA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Through Hole	TO-205AD (TO-39)
Partner Stock	2N6660-E3 VISHAY SILICONIX	N-Channel 60 V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-205AD (TO-39)	Vishay Siliconix	-	N-Channel	60 V	5V, 10V	990mA (Tc)	50 pF @ 25 V	725mW (Ta), 6.25W (Tc)	3Ohm @ 1A, 10V	2V @ 1mA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Through Hole	TO-205AD (TO-39)
Partner Stock	2N6660JTVP02 VISHAY SILICONIX	N-Channel 60 V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-205AD (TO-39)	Vishay Siliconix	-	N-Channel	60 V	5V, 10V	990mA (Tc)	50 pF @ 25 V	725mW (Ta), 6.25W (Tc)	3Ohm @ 1A, 10V	2V @ 1mA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Through Hole	TO-205AD (TO-39)
Partner Stock	2N6660JTXP02 VISHAY SILICONIX	N-Channel 60 V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-205AD (TO-39)	Vishay Siliconix	-	N-Channel	60 V	5V, 10V	990mA (Tc)	50 pF @ 25 V	725mW (Ta), 6.25W (Tc)	3Ohm @ 1A, 10V	2V @ 1mA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Through Hole	TO-205AD (TO-39)
Partner Stock	2N6661 VISHAY SILICONIX	N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39	Vishay Siliconix	-	N-Channel	90 V	5V, 10V	860mA (Tc)	50 pF @ 25 V	725mW (Ta), 6.25W (Tc)	4Ohm @ 1A, 10V	2V @ 1mA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Through Hole	TO-39
Partner Stock	2N6661-2 VISHAY SILICONIX	N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39	Vishay Siliconix	-	N-Channel	90 V	5V, 10V	860mA (Tc)	50 pF @ 25 V	725mW (Ta), 6.25W (Tc)	4Ohm @ 1A, 10V	2V @ 1mA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Through Hole	TO-39
Partner Stock	2N6661-E3 VISHAY SILICONIX	N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39	Vishay Siliconix	-	N-Channel	90 V	5V, 10V	860mA (Tc)	50 pF @ 25 V	725mW (Ta), 6.25W (Tc)	4Ohm @ 1A, 10V	2V @ 1mA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Through Hole	TO-39
Partner Stock	2N6661JTVP02 VISHAY SILICONIX	N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39	Vishay Siliconix	-	N-Channel	90 V	5V, 10V	860mA (Tc)	50 pF @ 25 V	725mW (Ta), 6.25W (Tc)	4Ohm @ 1A, 10V	2V @ 1mA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Through Hole	TO-39
Partner Stock	2N6661JTX02 VISHAY SILICONIX	N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39	Vishay Siliconix	-	N-Channel	90 V	5V, 10V	860mA (Tc)	50 pF @ 25 V	725mW (Ta), 6.25W (Tc)	4Ohm @ 1A, 10V	2V @ 1mA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Through Hole	TO-39
Partner Stock	2N6661JTXP02 VISHAY SILICONIX	N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39	Vishay Siliconix	-	N-Channel	90 V	5V, 10V	860mA (Tc)	50 pF @ 25 V	725mW (Ta), 6.25W (Tc)	4Ohm @ 1A, 10V	2V @ 1mA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Through Hole	TO-39
Partner Stock	2N7002-E3 VISHAY SILICONIX	N-Channel 60 V 115mA (Ta) 200mW (Ta) Surface Mount TO-236	Vishay Siliconix	-	N-Channel	60 V	5V, 10V	115mA (Ta)	50 pF @ 25 V	200mW (Ta)	7.5Ohm @ 500mA, 10V	2.5V @ 250µA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-236
Partner Stock	2N7002-E3 VISHAY SILICONIX	N-Channel 60 V 115mA (Ta) 200mW (Ta) Surface Mount TO-236	Vishay Siliconix	-	N-Channel	60 V	5V, 10V	115mA (Ta)	50 pF @ 25 V	200mW (Ta)	7.5Ohm @ 500mA, 10V	2.5V @ 250µA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-236
Partner Stock	2N7002-T1-E3 VISHAY SILICONIX	N-Channel 60 V 115mA (Ta) 200mW (Ta) Surface Mount TO-236	Vishay Siliconix	-	N-Channel	60 V	5V, 10V	115mA (Ta)	50 pF @ 25 V	200mW (Ta)	7.5Ohm @ 500mA, 10V	2.5V @ 250µA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-236
Partner Stock	2N7002E-T1-GE3 VISHAY SILICONIX	N-Channel 60 V 240mA (Ta) 350mW (Ta) Surface Mount TO-236	Vishay Siliconix	-	N-Channel	60 V	10V	240mA (Ta)	21 pF @ 5 V	350mW (Ta)	3Ohm @ 250mA, 10V	2.5V @ 250µA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-236
Partner Stock	2N7002E-T1-GE3 VISHAY SILICONIX	N-Channel 60 V 240mA (Ta) 350mW (Ta) Surface Mount TO-236	Vishay Siliconix	-	N-Channel	60 V	10V	240mA (Ta)	21 pF @ 5 V	350mW (Ta)	3Ohm @ 250mA, 10V	2.5V @ 250µA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-236
Partner Stock	2N7002K-T1-E3 VISHAY SILICONIX	N-Channel 60 V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236)	Vishay Siliconix	TrenchFET®	N-Channel	60 V	4.5V, 10V	300mA (Ta)	30 pF @ 25 V	350mW (Ta)	2Ohm @ 500mA, 10V	2.5V @ 250µA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)
Partner Stock	2N7002K-T1-E3 VISHAY SILICONIX	N-Channel 60 V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236)	Vishay Siliconix	TrenchFET®	N-Channel	60 V	4.5V, 10V	300mA (Ta)	30 pF @ 25 V	350mW (Ta)	2Ohm @ 500mA, 10V	2.5V @ 250µA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)
Partner Stock	2N7002K-T1-GE3 VISHAY SILICONIX	N-Channel 60 V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236)	Vishay Siliconix	TrenchFET®	N-Channel	60 V	4.5V, 10V	300mA (Ta)	30 pF @ 25 V	350mW (Ta)	2Ohm @ 500mA, 10V	2.5V @ 250µA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)
Partner Stock	2N7002K-T1-GE3 VISHAY SILICONIX	N-Channel 60 V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236)	Vishay Siliconix	TrenchFET®	N-Channel	60 V	4.5V, 10V	300mA (Ta)	30 pF @ 25 V	350mW (Ta)	2Ohm @ 500mA, 10V	2.5V @ 250µA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)

N-Channel 60 V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-205AD (TO-39)

N-Channel 60 V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-205AD (TO-39)

N-Channel 60 V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-205AD (TO-39)

N-Channel 60 V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-205AD (TO-39)

N-Channel 60 V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-205AD (TO-39)

N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39

N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39

N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39

N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39

N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39

N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39

N-Channel 60 V 115mA (Ta) 200mW (Ta) Surface Mount TO-236

N-Channel 60 V 115mA (Ta) 200mW (Ta) Surface Mount TO-236

N-Channel 60 V 115mA (Ta) 200mW (Ta) Surface Mount TO-236

N-Channel 60 V 240mA (Ta) 350mW (Ta) Surface Mount TO-236

N-Channel 60 V 240mA (Ta) 350mW (Ta) Surface Mount TO-236

N-Channel 60 V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236)

N-Channel 60 V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236)

N-Channel 60 V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236)

N-Channel 60 V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236)

Recommended Rectifiers - FETs