FETs from Microsemi Corporation

Manufacturer	Series	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate charge (Qg) when Vgs is applied (max)	Technology	Configuration	FET Feature	Operating Temperature Range	Automotive	Mounting Type

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Stock Type Supplier Rank	Supplier	Stock Location	Image	Part number / Manufacturer / More information	QTY	Date Code	Unit Price	Minimum Order Quantity / Standard Packing Quantity	Estimated Ship Date	ECAD Model	Description CoreStaff Part Number	Manufacturer	Series	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate charge (Qg) when Vgs is applied (max)	Technology	Configuration	FET Feature	Operating Temperature Range	Applications	Automotive	Mounting Type	Device Package	Delete
		Partner Stock		2N7334 MICROSEMI CORPORATION							Mosfet Array 100V 1A 1.4W Through Hole MO-036AB	Microsemi Corporation	-	100V	1A	-	1.4W	700mOhm @ 600mA, 10V	4V @ 250µA	60nC @ 10V	MOSFET (Metal Oxide)	4 N-Channel	-	-55°C ~ 150°C (TJ)			Through Hole	MO-036AB