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CoreStaff Part Number		 Manufacturer Series FET Type Drain to Source Voltage (Vdss) Drive Voltage (Max Rds On, Min Rds On) Current - Continuous Drain (Id) @ 25°C Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Operating Temperature Range Applications Automotive Mounting Type Device Package Technology FET Feature
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SCT3030ALGC11

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ROHM N-Channel 650V 18V 70A(Tc) 1526 pF @ 500 V 262W(Tc) 39mOhms @ 27A, 18V 5.6V @ 13.3mA 104 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247N Sicfet (Silicon Carbide)
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SCT3030ALHRC11

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ROHM N-Channel 650V 18V 70A(Tc) 1526 pF @ 500 V 262W 39mOhms @ 27A, 18V 5.6V @ 13.3mA 104 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247N Sicfet (Silicon Carbide)
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SCT3030ARC14
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ROHM N-Channel 650V 18V 70A(Tc) 1526 pF @ 500 V 262W 39mOhms @ 27A, 18V 5.6V @ 13.3mA 104 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247-4L Sicfet (Silicon Carbide)
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SCT3030ARC15

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ROHM N-Channel 650V 18V 70A(Tc) 1526 pF @ 500 V 262W 39mOhms @ 27A, 18V 5.6V @ 13.3mA 104 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247-4L Mosfet (Metal Oxide)
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SCT3030ARHRC15

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ROHM N-Channel 650V 18V 70A(Tc) 1526 pF @ 500 V 262W 39mOhms @ 27A, 18V 5.6V @ 13.3mA 104 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247-4L Mosfet (Metal Oxide)
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SCT3030AW7TL

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ROHM N-Channel 650V 70A(Tc) 1526 pF @ 500 V 267W 39mOhms @ 27A, 18V 5.6V @ 13.3mA 104 nC @ 18 V +22V, -4V 175°C(TJ) Surface Mount TO-263-7 Sicfet (Silicon Carbide)
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SCT3030KLGC11

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ROHM N-Channel 1200V 18V 72A(Tc) 2222 pF @ 800 V 339W(Tc) 39mOhms @ 27A, 18V 5.6V @ 13.3mA 131 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247N Sicfet (Silicon Carbide)
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SCT3030KLHRC11

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ROHM N-Channel 1200V 18V 72A(Tc) 2222 pF @ 800 V 339W 39mOhms @ 27A, 18V 5.6V @ 13.3mA 131 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247N Sicfet (Silicon Carbide)
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SCT3040KLGC11

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ROHM N-Channel 1200V 18V 55A(Tc) 1337 pF @ 800 V 262W(Tc) 52mOhms @ 20A, 18V 5.6V @ 10mA 107 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247N Sicfet (Silicon Carbide)
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SCT3040KLHRC11

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ROHM N-Channel 1200V 18V 55A(Tc) 1337 pF @ 800 V 262W 52mOhms @ 20A, 18V 5.6V @ 10mA 107 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247N Sicfet (Silicon Carbide)
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SCT3040KRC14
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ROHM N-Channel 1200V 18V 55A(Tc) 1337 pF @ 800 V 262W 52mOhms @ 20A, 18V 5.6V @ 10mA 107 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247-4L Sicfet (Silicon Carbide)
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SCT3040KRC15

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ROHM N-Channel 1200V 18V 55A(Tj) 1337 pF @ 800 V 262W 52mOhms @ 20A, 18V 5.6V @ 10mA 107 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247-4L Sic (Silicon Carbide Junction Transistor)
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SCT3040KRHRC15

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ROHM N-Channel 1200V 18V 55A(Tc) 1337 pF @ 800 V 262W 52mOhms @ 20A, 18V 5.6V @ 10mA 107 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247-4L Mosfet (Metal Oxide)
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SCT3040KW7TL

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ROHM N-Channel 1200V 56A(Tc) 1337 pF @ 800 V 267W 52mOhms @ 20A, 18V 5.6V @ 10mA 107 nC @ 18 V +22V, -4V 175°C(TJ) Surface Mount TO-263-7 Sicfet (Silicon Carbide)
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SCT3060ALGC11

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ROHM N-Channel 650V 18V 39A(Tc) 852 pF @ 500 V 165W(Tc) 78mOhms @ 13A, 18V 5.6V @ 6.67mA 58 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247N Sicfet (Silicon Carbide)
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SCT3060ALHRC11

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ROHM N-Channel 650V 18V 39A(Tc) 852 pF @ 500 V 165W 78mOhms @ 13A, 18V 5.6V @ 6.67mA 58 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247N Sicfet (Silicon Carbide)
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SCT3060ARC14
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Packaging：stick/tube

ROHM N-Channel 650V 18V 39A(Tc) 852 pF @ 500 V 165W 78mOhms @ 13A, 18V 5.6V @ 6.67mA 58 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247-4L Sicfet (Silicon Carbide)
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SCT3060ARC15

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ROHM N-Channel 650V 18V 39A(Tj) 852 pF @ 500 V 165W 78mOhms @ 13A, 18V 5.6V @ 6.67mA 58 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247-4L Sic (Silicon Carbide Junction Transistor)
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SCT3060ARHRC15

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ROHM N-Channel 650V 18V 39A(Tc) 852 pF @ 500 V 165W 78mOhms @ 13A, 18V 5.6V @ 6.67mA 58 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247-4L Mosfet (Metal Oxide)
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SCT3060AW7TL

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ROHM N-Channel 650V 38A(Tc) 852 pF @ 500 V 159W 78mOhms @ 13A, 18V 5.6V @ 6.67mA 58 nC @ 18 V +22V, -4V 175°C(TJ) Surface Mount TO-263-7 Sicfet (Silicon Carbide)
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SCT3080ALGC11

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ROHM N-Channel 650V 18V 30A(Tc) 571 pF @ 500 V 134W(Tc) 104mOhms @ 10A, 18V 5.6V @ 5mA 48 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247N Sicfet (Silicon Carbide)
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SCT3080ALHRC11

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ROHM N-Channel 650V 18V 30A(Tc) 571 pF @ 500 V 134W 104mOhms @ 10A, 18V 5.6V @ 5mA 48 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247N Sicfet (Silicon Carbide)
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SCT3080ARC14
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ROHM N-Channel 650V 18V 30A(Tc) 571 pF @ 500 V 134W 104mOhms @ 10A, 18V 5.6V @ 5mA 48 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247-4L Sicfet (Silicon Carbide)
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SCT3080ARC15

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ROHM N-Channel 650V 18V 30A(Tj) 571 pF @ 500 V 134W 104mOhms @ 10A, 18V 5.6V @ 5mA 48 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247-4L Sic (Silicon Carbide Junction Transistor)
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SCT3080ARHRC15

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ROHM N-Channel 650V 18V 30A(Tc) 571 pF @ 500 V 134W 104mOhms @ 10A, 18V 5.6V @ 5mA 48 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247-4L Mosfet (Metal Oxide)
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SCT3080AW7TL

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ROHM N-Channel 650V 29A(Tc) 571 pF @ 500 V 125W 104mOhms @ 10A, 18V 5.6V @ 5mA 48 nC @ 18 V +22V, -4V 175°C(TJ) Surface Mount TO-263-7 Sicfet (Silicon Carbide)
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SCT3080KLGC11

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ROHM N-Channel 1200V 18V 31A(Tc) 785 pF @ 800 V 165W(Tc) 104mOhms @ 10A, 18V 5.6V @ 5mA 60 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247N Sicfet (Silicon Carbide)
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SCT3080KLGC11

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CoreStaff Part Number：st67275264

ROHM N-Channel 1200V 18V 31A(Tc) 785 pF @ 800 V 165W(Tc) 104mOhms @ 10A, 18V 5.6V @ 5mA 60 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247N Sicfet (Silicon Carbide)
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SCT3080KLHRC11

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ROHM N-Channel 1200V 18V 31A(Tc) 785 pF @ 800 V 165W 104mOhms @ 10A, 18V 5.6V @ 5mA 60 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247N Sicfet (Silicon Carbide)
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SCT3080KRC14
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ROHM N-Channel 1200V 18V 31A(Tc) 785 pF @ 800 V 165W 104mOhms @ 10A, 18V 5.6V @ 5mA 60 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247-4L Sicfet (Silicon Carbide)
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SCT3080KRC15

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ROHM N-Channel 1200V 18V 31A(Tj) 785 pF @ 800 V 165W 104mOhms @ 10A, 18V 5.6V @ 5mA 60 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247-4L Sic (Silicon Carbide Junction Transistor)
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SCT3080KRHRC15

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ROHM N-Channel 1200V 18V 31A(Tc) 785 pF @ 800 V 165W 104mOhms @ 10A, 18V 5.6V @ 5mA 60 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247-4L Mosfet (Metal Oxide)
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SCT3080KW7TL

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ROHM N-Channel 1200V 30A(Tc) 785 pF @ 800 V 159W 104mOhms @ 10A, 18V 5.6V @ 5mA 60 nC @ 18 V +22V, -4V 175°C(TJ) Surface Mount TO-263-7 Sicfet (Silicon Carbide)
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SCT3105KLGC11

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ROHM N-Channel 1200V 18V 24A(Tc) 574 pF @ 800 V 134W 137mOhms @ 7.6A, 18V 5.6V @ 3.81mA 51 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247N Sicfet (Silicon Carbide)
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SCT3105KLHRC11

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ROHM N-Channel 1200V 18V 24A(Tc) 574 pF @ 800 V 134W 137mOhms @ 7.6A, 18V 5.6V @ 3.81mA 51 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247N Sicfet (Silicon Carbide)
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ROHM N-Channel 1200V 18V 24A(Tj) 574 pF @ 800 V 134W 137mOhms @ 7.6A, 18V 5.6V @ 3.81mA 51 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247-4L Sic (Silicon Carbide Junction Transistor)
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SCT3105KRHRC15

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ROHM N-Channel 1200V 18V 24A(Tc) 574 pF @ 800 V 134W 137mOhms @ 7.6A, 18V 5.6V @ 3.81mA 51 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247-4L Mosfet (Metal Oxide)
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ROHM N-Channel 1200V 23A(Tc) 574 pF @ 800 V 125W 137mOhms @ 7.6A, 18V 5.6V @ 3.81mA 51 nC @ 18 V +22V, -4V 175°C(TJ) Surface Mount TO-263-7 Sicfet (Silicon Carbide)
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SCT3120ALGC11

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ROHM N-Channel 650V 18V 21A(Tc) 460 pF @ 500 V 103W(Tc) 156mOhms @ 6.7A, 18V 5.6V @ 3.33mA 38 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247N Sicfet (Silicon Carbide)
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SCT3120ALHRC11

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ROHM N-Channel 650V 18V 21A(Tc) 460 pF @ 500 V 103W 156mOhms @ 6.7A, 18V 5.6V @ 3.33mA 38 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247N Sicfet (Silicon Carbide)
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SCT3120AW7TL

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ROHM N-Channel 650V 21A(Tc) 460 pF @ 500 V 100W 156mOhms @ 6.7A, 18V 5.6V @ 3.33mA 38 nC @ 18 V +22V, -4V 175°C(TJ) Surface Mount TO-263-7 Sicfet (Silicon Carbide)
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SCT3160KLGC11

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ROHM N-Channel 1200V 18V 17A(Tc) 398 pF @ 800 V 103W(Tc) 208mOhms @ 5A, 18V 5.6V @ 2.5mA 42 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247N Sicfet (Silicon Carbide)
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SCT3160KLHRC11

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ROHM N-Channel 1200V 18V 17A(Tc) 398 pF @ 800 V 103W 208mOhms @ 5A, 18V 5.6V @ 2.5mA 42 nC @ 18 V +22V, -4V 175°C(TJ) Through Hole TO-247N Sicfet (Silicon Carbide)
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ROHM N-Channel 1200V 18V 17A(Tc) 398 pF @ 800 V 208mOhms @ 5A, 18V 5.6V @ 2.5mA 42 nC @ 18 V +22V, -4V 175°C(TJ) Surface Mount TO-263-7L Sic (Silicon Carbide Junction Transistor)
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SCT3160KW7TL

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ROHM N-Channel 1200V 17A(Tc) 398 pF @ 800 V 100W 208mOhms @ 5A, 18V 5.6V @ 2.5mA 42 nC @ 18 V +22V, -4V 175°C(TJ) Surface Mount TO-263-7 Sicfet (Silicon Carbide)
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SCT3160KWAHRTL

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SCT3160KWATL

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SCT4013DEC11

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Packaging：stick/tube

ROHM N-Channel 750V 18V 105A(Tj) 4580 pF @ 500 V 312W 16.9mOhms @ 58A, 18V 4.8V @ 30.8mA 170 nC @ 18 V +21V, -4V 175°C(TJ) Through Hole TO-247N Sicfet (Silicon Carbide)
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A-1 		corestaff CoreStaff Japan stock

Our Inventory
RoHS
90
Real-time
Stock Quantity

On Order : 0

MOQ : 1
SPQ : 1

Detail

Packaging：stick/tube

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A-1 		corestaff CoreStaff Japan stock

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SCT4013DLLTRDC

PDF RoHS
100
Real-time
Stock Quantity

On Order : 0

MOQ : 1
SPQ : 1

Detail

Packaging：cut tape

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