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库存类别供应商排名	库存所在位置	型号 / 制造商 / 其他	库存量	生产批次	最低订货数量 / 后续订购数量	预定出货日	资讯核友型号	Manufacturer	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature Range	Mounting Type	Device Package
質量保證 B-1	来自供应商的订海外位置	IRF3205PBF INFINEON	50,000	22+		预计 16个工作日	核友型号：st49404319	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	110A(Tc)	3247 pF @ 25 V	200W(Tc)	8mOhms @ 62A, 10V	4V @ 250µA	146 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRF3205PBF INFINEON	24,000	22+		预计 11个工作日	核友型号：st75024369	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	110A(Tc)	3247 pF @ 25 V	200W(Tc)	8mOhms @ 62A, 10V	4V @ 250µA	146 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRF3205PBF INFINEON	45	2211+		预计 4个工作日	核友型号：st74840083	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	110A(Tc)	3247 pF @ 25 V	200W(Tc)	8mOhms @ 62A, 10V	4V @ 250µA	146 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	来自供应商的订	IRF3205PBF INFINEON TECHNOLOGIES	25,000	N/A	MOQ : 600 SPQ : 300	预计 16个工作日	核友型号：st76681659	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	110A(Tc)	3247 pF @ 25 V	200W(Tc)	8mOhms @ 62A, 10V	4V @ 250µA	146 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRF3205STRLPBF INFINEON	340			预计 11个工作日	核友型号：st75141163	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	110A(Tc)	3247 pF @ 25 V	200W(Tc)	8mOhms @ 62A, 10V	4V @ 250µA	146 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	来自供应商的订	IRF3205STRLPBF INFINEON	6	2451+		预计 11个工作日	核友型号：st76085050	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	110A(Tc)	3247 pF @ 25 V	200W(Tc)	8mOhms @ 62A, 10V	4V @ 250µA	146 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	来自供应商的订	IRF3205STRLPBF INFINEON	800	22+		预计 11个工作日	核友型号：st71361746	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	110A(Tc)	3247 pF @ 25 V	200W(Tc)	8mOhms @ 62A, 10V	4V @ 250µA	146 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	来自供应商的订	IRF3205STRLPBF INFINEON TECHNOLOGIES	4,000	N/A	MOQ : 800 SPQ : 800	预计 16个工作日	核友型号：st76681660	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	110A(Tc)	3247 pF @ 25 V	200W(Tc)	8mOhms @ 62A, 10V	4V @ 250µA	146 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	来自供应商的订	IRF3205ZPBF INFINEON	4,775	22+		预计 16个工作日	核友型号：st76078863	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	75A(Tc)	3450 pF @ 25 V	170W(Tc)	6.5mOhms @ 66A, 10V	4V @ 250µA	110 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	来自供应商的订	IRF3205ZSTRLPBF INFINEON TECHNOLOGIES	2,400	N/A	MOQ : 380 SPQ : 10	预计 16个工作日	核友型号：st76681661	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	75A(Tc)	3450 pF @ 25 V	170W(Tc)	6.5mOhms @ 66A, 10V	4V @ 250µA	110 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	来自供应商的订	IRF3415PBF INFINEON	4,000	22/23+	MOQ : 1,000 SPQ : 1	预计 11个工作日	核友型号：st76433277	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10V	43A (Tc)	2400 pF @ 25 V	200W(Tc)	42mOhms @ 22A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRF3415PBF INFINEON	5			预计 11个工作日	核友型号：st75141164	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10V	43A (Tc)	2400 pF @ 25 V	200W(Tc)	42mOhms @ 22A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	来自供应商的订	IRF3415PBF INFINEON TECHNOLOGIES	400	N/A	MOQ : 300 SPQ : 150	预计 16个工作日	核友型号：st76681662	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10V	43A (Tc)	2400 pF @ 25 V	200W(Tc)	42mOhms @ 22A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRF3415SPBF INFINEON	1			预计 11个工作日	核友型号：st75141165	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10V	43A (Tc)	2400 pF @ 25 V	3.8W(Ta), 200W(Tc)	42mOhms @ 22A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	来自供应商的订	IRF3415STRLPBF INFINEON	6,111	22+		预计 16个工作日	核友型号：st76078864	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10V	43A (Tc)	2400 pF @ 25 V	3.8W(Ta), 200W(Tc)	42mOhms @ 22A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	来自供应商的订	IRF3415STRLPBF INFINEON	6,400	21+	MOQ : 500 SPQ : 1	预计 11个工作日	核友型号：st76477657	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10V	43A (Tc)	2400 pF @ 25 V	3.8W(Ta), 200W(Tc)	42mOhms @ 22A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	来自供应商的订	IRF3703PBF INFINEON	14			预计 11个工作日	核友型号：st75141166	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	7V, 10V	210A(Tc)	8250 pF @ 25 V	3.8W(Ta), 230W(Tc)	2.8mOhms @ 76A, 10V	4V @ 250µA	209 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRF3703PBF INFINEON	3,768	18+		预计 11个工作日	核友型号：st71361747	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	7V, 10V	210A(Tc)	8250 pF @ 25 V	3.8W(Ta), 230W(Tc)	2.8mOhms @ 76A, 10V	4V @ 250µA	209 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRF3709STRLPBF INFINEON	1			预计 11个工作日	核友型号：st75141167	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	90A (Tc)	2672 pF @ 16 V	3.1W(Ta), 120W(Tc)	9mOhms @ 15A, 10V	3V @ 250µA	41 nC @ 5 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	来自供应商的订	IRF3709ZPBF INFINEON	40			预计 11个工作日	核友型号：st75141168	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	87A(Tc)	2130 pF @ 15 V	79W (Tc)	6.3mOhms @ 21A, 10V	2.25V @ 250µA	26 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRF3710LPBF INFINEON	366			预计 11个工作日	核友型号：st75141169	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	57A(Tc)	3130 pF @ 25 V	200W(Tc)	23mOhms @ 28A, 10V	4V @ 250µA	130 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-262
質量保證 B-2	来自供应商的订	IRF3710PBF INFINEON	90,000	22/25+	MOQ : 3,000 SPQ : 1	预计 11个工作日	核友型号：st76354859	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	57A(Tc)	3130 pF @ 25 V	200W(Tc)	23mOhms @ 28A, 10V	4V @ 250µA	130 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRF3710PBF INFINEON	974			预计 11个工作日	核友型号：st75141170	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	57A(Tc)	3130 pF @ 25 V	200W(Tc)	23mOhms @ 28A, 10V	4V @ 250µA	130 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	来自供应商的订	IRF3710PBF INFINEON TECHNOLOGIES	138,039	N/A	MOQ : 1,000 SPQ : 1,000	预计 16个工作日	核友型号：st76681663	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	57A(Tc)	3130 pF @ 25 V	200W(Tc)	23mOhms @ 28A, 10V	4V @ 250µA	130 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRF3710STRLPBF INFINEON	7,200	21+		预计 11个工作日	核友型号：st71361748	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	57A(Tc)	3130 pF @ 25 V	200W(Tc)	23mOhms @ 28A, 10V	4V @ 250µA	130 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	来自供应商的订	IRF3710STRLPBF INFINEON	165			预计 11个工作日	核友型号：st75141171	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	57A(Tc)	3130 pF @ 25 V	200W(Tc)	23mOhms @ 28A, 10V	4V @ 250µA	130 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	来自供应商的订	IRF3710STRLPBF INFINEON	20,540	22/23+	MOQ : 250 SPQ : 1	预计 11个工作日	核友型号：st76513496	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	57A(Tc)	3130 pF @ 25 V	200W(Tc)	23mOhms @ 28A, 10V	4V @ 250µA	130 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	来自供应商的订	IRF3710STRLPBF INFINEON TECHNOLOGIES	18,400	N/A	MOQ : 800 SPQ : 800	预计 16个工作日	核友型号：st76681664	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	57A(Tc)	3130 pF @ 25 V	200W(Tc)	23mOhms @ 28A, 10V	4V @ 250µA	130 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	来自供应商的订	IRF3710ZPBF INFINEON	2			预计 11个工作日	核友型号：st75141172	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	59A(Tc)	2900 pF @ 25 V	-55°C ~ 150°C (TJ)	18mOhms @ 35A, 10V	4V @ 250µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	来自供应商的订	IRF3710ZPBF INFINEON	1,920	22/23+	MOQ : 250 SPQ : 1	预计 11个工作日	核友型号：st76502383	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	59A(Tc)	2900 pF @ 25 V	-55°C ~ 150°C (TJ)	18mOhms @ 35A, 10V	4V @ 250µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	来自供应商的订	IRF3710ZSTRLPBF INFINEON	4,000	22+	MOQ : 1,000 SPQ : 1	预计 11个工作日	核友型号：st76452052	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	59A(Tc)	2900 pF @ 25 V	-55°C ~ 150°C (TJ)	18mOhms @ 35A, 10V	4V @ 250µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	来自供应商的订	IRF3710ZSTRLPBF INFINEON	800	22+		预计 11个工作日	核友型号：st75023622	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	59A(Tc)	2900 pF @ 25 V	-55°C ~ 150°C (TJ)	18mOhms @ 35A, 10V	4V @ 250µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	来自供应商的订	IRF3805PBF INFINEON	4	na		预计 7个工作日	核友型号：st68903691	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	75A(Tc)	7960 pF @ 25 V	300W(Tc)	3.3mOhms @ 75A, 10V	4V @ 250µA	290 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRF3805SPBF INFINEON	20	NA		预计 7个工作日	核友型号：st68903692	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	75A(Tc)	7960 pF @ 25 V	300W(Tc)	3.3mOhms @ 75A, 10V	4V @ 250µA	290 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	来自供应商的订	IRF3805STRLPBF INFINEON	811	22/23+	MOQ : 100 SPQ : 1	预计 11个工作日	核友型号：st76547006	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	75A(Tc)	7960 pF @ 25 V	300W(Tc)	3.3mOhms @ 75A, 10V	4V @ 250µA	290 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	来自供应商的订	IRF3805STRLPBF INFINEON	1			预计 11个工作日	核友型号：st75141173	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	75A(Tc)	7960 pF @ 25 V	300W(Tc)	3.3mOhms @ 75A, 10V	4V @ 250µA	290 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	来自供应商的订	IRF3808PBF INFINEON	25			预计 11个工作日	核友型号：st75141174	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10V	140A(Tc)	5310 pF @ 25 V	330W(Tc)	7mOhms @ 82A, 10V	4V @ 250µA	220 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRF3808PBF INFINEON	662	20+		预计 11个工作日	核友型号：st71361749	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10V	140A(Tc)	5310 pF @ 25 V	330W(Tc)	7mOhms @ 82A, 10V	4V @ 250µA	220 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	来自供应商的订	IRF3808PBF INFINEON	9,000	21+	MOQ : 1,000 SPQ : 1	预计 11个工作日	核友型号：st76446141	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10V	140A(Tc)	5310 pF @ 25 V	330W(Tc)	7mOhms @ 82A, 10V	4V @ 250µA	220 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRF3808SPBF INFINEON	6			预计 11个工作日	核友型号：st75141175	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10V	106A(Tc)	5310 pF @ 25 V	200W(Tc)	7mOhms @ 82A, 10V	4V @ 250µA	220 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	来自供应商的订	IRF3808STRLPBF INFINEON	1,600	21+	MOQ : 500 SPQ : 1	预计 11个工作日	核友型号：st76497486	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10V	106A(Tc)	5310 pF @ 25 V	200W(Tc)	7mOhms @ 82A, 10V	4V @ 250µA	220 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	来自供应商的订	IRF40B207 INFINEON	740			预计 11个工作日	核友型号：st75141176	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	6V, 10V	95A (Tc)	2110 pF @ 25 V	150°C (TJ)	4.5mOhms @ 57A, 10V	3.9V @ 50µA	68 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRF40R207 INFINEON	500			预计 11个工作日	核友型号：st75141177	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	6V, 10V	56A (Tc)	2110 pF @ 25 V	150°C (TJ)	5.1mOhms @ 55A, 10V	3.9V @ 50µA	68 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3
質量保證 B-1	来自供应商的订	IRF4104PBF INFINEON	5			预计 11个工作日	核友型号：st75141178	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10V	75A(Tc)	3000 pF @ 25 V	140W (Tc)	5.5mOhms @ 75A, 10V	4V @ 250µA	100 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	来自供应商的订海外位置	IRF4104PBF INFINEON	12,907	22+		预计 16个工作日	End of Life 核友型号：st49404337	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10V	75A(Tc)	3000 pF @ 25 V	140W (Tc)	5.5mOhms @ 75A, 10V	4V @ 250µA	100 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRF4104SPBF INFINEON	28			预计 11个工作日	核友型号：st75141179	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10V	75A(Tc)	3000 pF @ 25 V	140W (Tc)	5.5mOhms @ 75A, 10V	4V @ 250µA	100 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	来自供应商的订	IRF4104SPBF INFINEON	8,000	21+	MOQ : 500 SPQ : 1	预计 11个工作日	核友型号：st76474164	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10V	75A(Tc)	3000 pF @ 25 V	140W (Tc)	5.5mOhms @ 75A, 10V	4V @ 250µA	100 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	来自供应商的订	IRF4905LPBF INFINEON	44			预计 11个工作日	核友型号：st75141180	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	42A (Tc)	3500 pF @ 25 V	170W(Tc)	20mOhms @ 42A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Through Hole	TO-262
質量保證 B-1	来自供应商的订	IRF4905LPBF INFINEON	500	2150		预计 7个工作日	核友型号：st68903698	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	42A (Tc)	3500 pF @ 25 V	170W(Tc)	20mOhms @ 42A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Through Hole	TO-262
質量保證 B-2	来自供应商的订	IRF4905PBF INFINEON TECHNOLOGIES	2,600	N/A	MOQ : 500 SPQ : 250	预计 16个工作日	核友型号：st76681665	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	74A (Tc)	3400 pF @ 25 V	200W(Tc)	20mOhms @ 38A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB