TCMT1107
VISHAY SEMICONDUCTORS
รูปภาพใช้สำหรับการอ้างอิงเท่านั้น หากต้องการข้อมูลเพิ่มเติมโปรดดูที่คำอธิบายสินค้าด้านล่าง
เอกสาร
คำอธิบายสินค้า
| Ambient Temperature Range High | 100 °C |
| Case/Package | SOP |
| Collector Emitter Breakdown Voltage | 70 V |
| Collector Emitter Saturation Voltage | 300 mV |
| Collector Emitter Voltage (VCEO) | 70 V |
| Contact Plating | Tin |
| Current Transfer Ratio | 160 % |
| Fall Time | 4.7 s |
| Forward Current | 60 mA |
| Forward Voltage | 1.35 V |
| Height | 2.3 mm |
| Input Current | 50 mA |
| Isolation Voltage | 3.75 kV |
| Lead Free | Lead Free |
| Max Collector Current | 50 mA |
| Max Input Current | 60 mA |
| Max Junction Temperature (Tj) | 125 °C |
| Max Operating Temperature | 100 °C |
| Max Output Voltage | 70 V |
| Max Power Dissipation | 250 mW |
| Min Operating Temperature | -40 °C |
| Mount | PCB , Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 4 |
| Output Current per Channel | 50 mA |
| Output Voltage | 70 V |
| Power Dissipation | 100 mW |
| Radiation Hardening | No |
| REACH SVHC | No |
| Reverse Breakdown Voltage | 6 V |
| Reverse Voltage (DC) | 6 V |
| Rise Time | 3 s |
| Schedule B | 8541408000, 8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|85 |
| Turn-Off Delay Time | 4 µs |
| Turn-On Delay Time | 1.5 µs |
| Voltage | 6 V |
| Voltage Rating (DC) | 70 V |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
มีอยู่ในสต้อค: 137
MOQ:137
SPQ:1
| จำนวน | ราคาต่อหน่วย (FOB JAPAN) |
|---|---|
| 137 - | $0.539 |
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