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庫存類別供應商排名	庫存所在位置	型號 / 製造商 / 其他	庫存量	生產年份/批號	最低訂貨數量 / 後續訂購數量	預定出貨日	資訊核友管理編號	Manufacturer	Series	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature Range	Mounting Type	Device Package	Technology	FET Feature
質量保證 B-1	來自供應商的訂	IRFB4229PBF INFINEON	6,970	21+		預計 11個工作天	核友型號：st71361781	Infineon Technologies	HEXFETR	N-Channel	250V	10V	46A(Tc)	4560 pF @ 25 V	330W(Tc)	46mOhms @ 26A, 10V	5V @ 250μA	110 nC @ 10 V	±30V	-40°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB4229PBF INFINEON	6			預計 11個工作天	核友型號：st75141341	Infineon Technologies	HEXFETR	N-Channel	250V	10V	46A(Tc)	4560 pF @ 25 V	330W(Tc)	46mOhms @ 26A, 10V	5V @ 250μA	110 nC @ 10 V	±30V	-40°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB42N20DPBF INFINEON	2,404	16+		預計 11個工作天	核友型號：st71361782	Infineon Technologies	HEXFETR	N-Channel	200V	10V	44A(Tc)	3430 pF @ 25 V	2.4W(Ta), 330W(Tc)	55mOhms @ 26A, 10V	5.5V @ 250μA	140 nC @ 10 V	±30V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB4310PBF INFINEON	10			預計 11個工作天	核友型號：st75141342	Infineon Technologies	HEXFETR	N-Channel	100V	10V	130A(Tc)	7670 pF @ 50 V	300W(Tc)	7mOhms @ 75A, 10V	4V @ 250μA	250 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB4310PBF INFINEON	1,000	21+		預計 11個工作天	核友型號：st71361783	Infineon Technologies	HEXFETR	N-Channel	100V	10V	130A(Tc)	7670 pF @ 50 V	300W(Tc)	7mOhms @ 75A, 10V	4V @ 250μA	250 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB4310ZPBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st70647293	Infineon Technologies	HEXFETR	N-Channel	100V	10V	120A(Tc)	6860 pF @ 50 V	250W(Tc)	6mOhms @ 75A, 10V	4V @ 150μA	170 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRFB4310ZPBF INFINEON	1,000	19+		預計 16個工作天	核友型號：st49404508	Infineon Technologies	HEXFETR	N-Channel	100V	10V	120A(Tc)	6860 pF @ 50 V	250W(Tc)	6mOhms @ 75A, 10V	4V @ 150μA	170 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)	Standard
質量保證 B-1	來自供應商的訂	IRFB4310ZPBF INFINEON	5,000	21+		預計 11個工作天	核友型號：st71361784	Infineon Technologies	HEXFETR	N-Channel	100V	10V	120A(Tc)	6860 pF @ 50 V	250W(Tc)	6mOhms @ 75A, 10V	4V @ 150μA	170 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)	Standard
質量保證 B-1	來自供應商的訂	IRFB4310ZPBF INFINEON	1			預計 11個工作天	核友型號：st75141343	Infineon Technologies	HEXFETR	N-Channel	100V	10V	120A(Tc)	6860 pF @ 50 V	250W(Tc)	6mOhms @ 75A, 10V	4V @ 150μA	170 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)	Standard
質量保證 B-1	來自供應商的訂	IRFB4321PBF INFINEON	10			預計 11個工作天	核友型號：st75141344	Infineon Technologies	HEXFETR	N-Channel	150V	10V	85A(Tc)	4460 pF @ 50 V	350W(Tc)	15mOhms @ 33A, 10V	5V @ 250μA	110 nC @ 10 V	±30V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)	Standard
質量保證 B-1	來自供應商的訂	IRFB4321PBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st70647294	Infineon Technologies	HEXFETR	N-Channel	150V	10V	85A(Tc)	4460 pF @ 50 V	350W(Tc)	15mOhms @ 33A, 10V	5V @ 250μA	110 nC @ 10 V	±30V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB4410 INFINEON	50	21+		預計 11個工作天	核友型號：st75025803	Infineon Technologies	HEXFETR	N-Channel	100V	10V	96A(Tc)	5150 pF @ 50 V	250W(Tc)	10mOhms @ 58A, 10V	4V @ 150μA	180 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB4410ZPBF INFINEON	887	18+		預計 4個工作天	核友型號：st74840142	Infineon Technologies	HEXFETR	N-Channel	100V	10V	97A(Tc)	4820 pF @ 50 V	230W(Tc)	9mOhms @ 58A, 10V	4V @ 150μA	120 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB4410ZPBF INFINEON	10			預計 11個工作天	核友型號：st75141345	Infineon Technologies	HEXFETR	N-Channel	100V	10V	97A(Tc)	4820 pF @ 50 V	230W(Tc)	9mOhms @ 58A, 10V	4V @ 150μA	120 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB4410ZPBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st70647295	Infineon Technologies	HEXFETR	N-Channel	100V	10V	97A(Tc)	4820 pF @ 50 V	230W(Tc)	9mOhms @ 58A, 10V	4V @ 150μA	120 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB4510PBF INFINEON	23			預計 11個工作天	核友型號：st75141346	Infineon Technologies	HEXFETR	N-Channel	100V	10V	62A(Tc)	3180 pF @ 50 V	140W(Tc)	13.5mOhms @ 37A, 10V	4V @ 100μA	87 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRFB4510PBF INFINEON	10,000	20+		預計 16個工作天	核友型號：st49404513	Infineon Technologies	HEXFETR	N-Channel	100V	10V	62A(Tc)	3180 pF @ 50 V	140W(Tc)	13.5mOhms @ 37A, 10V	4V @ 100μA	87 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB4610PBF INFINEON	8			預計 11個工作天	核友型號：st75141347	Infineon Technologies	HEXFETR	N-Channel	100V	10V	73A(Tc)	3550 pF @ 50 V	190W(Tc)	14mOhms @ 44A, 10V	4V @ 100μA	140 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB4615PBF INFINEON	30			預計 11個工作天	核友型號：st75141348	Infineon Technologies	HEXFETR	N-Channel	150V	10V	35A(Tc)	1750 pF @ 50 V	144W(Tc)	39mOhms @ 21A, 10V	5V @ 100μA	26 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRFB4710PBF INFINEON	1,970	1752+		預計 16個工作天	核友型號：st49404514	Infineon Technologies	HEXFETR	N-Channel	100V	10V	75A(Tc)	6160 pF @ 25 V	3.8W(Ta), 200W(Tc)	14mOhms @ 45A, 10V	5.5V @ 250μA	170 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB4710PBF INFINEON	59			預計 11個工作天	核友型號：st75141349	Infineon Technologies	HEXFETR	N-Channel	100V	10V	75A(Tc)	6160 pF @ 25 V	3.8W(Ta), 200W(Tc)	14mOhms @ 45A, 10V	5.5V @ 250μA	170 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRFB52N15DPBF INFINEON	6,000	21+		預計 16個工作天	核友型號：st49404515	Infineon Technologies	HEXFETR	N-Channel	150V	10V	51A(Tc)	2770 pF @ 25 V	3.8W(Ta), 230W(Tc)	32mOhms @ 36A, 10V	5V @ 250μA	89 nC @ 10 V	±30V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)	Standard
質量保證 B-1	來自供應商的訂	IRFB5615PBF INFINEON	26			預計 11個工作天	核友型號：st75141350	Infineon Technologies	Trench Mosfet	N-Channel	150V	10V	35A(Tc)	1750 pF @ 50 V	144W(Tc)	39mOhms @ 21A, 10V	5V @ 100μA	40 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)	Standard
質量保證 B-1	來自供應商的訂	IRFB5615PBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st70647296	Infineon Technologies		N-Channel	150V	10V	35A(Tc)	1750 pF @ 50 V	144W(Tc)	39mOhms @ 21A, 10V	5V @ 100μA	40 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB5620PBF INFINEON	3,600	23+		預計 11個工作天	核友型號：st75019320	Infineon Technologies	Trench Mosfet	N-Channel	200V	10V	25A(Tc)	1710 pF @ 50 V	144W(Tc)	72.5mOhms @ 15A, 10V	5V @ 100μA	38 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)	Standard
質量保證 B-1	來自供應商的訂	IRFB5620PBF INFINEON	188			預計 11個工作天	核友型號：st75141351	Infineon Technologies	Trench Mosfet	N-Channel	200V	10V	25A(Tc)	1710 pF @ 50 V	144W(Tc)	72.5mOhms @ 15A, 10V	5V @ 100μA	38 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)	Standard
質量保證 B-1	來自供應商的訂	IRFB7430PBF INFINEON	19			預計 11個工作天	核友型號：st75141352	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	195A(Tc)	14240 pF @ 25 V	375W(Tc)	1.3mOhms @ 100A, 10V	3.9V @ 250μA	460 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRFB7430PBF INFINEON	7,000	21+		預計 16個工作天	核友型號：st49404517	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	195A(Tc)	14240 pF @ 25 V	375W(Tc)	1.3mOhms @ 100A, 10V	3.9V @ 250μA	460 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB7430PBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st70647297	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	195A(Tc)	14240 pF @ 25 V	375W(Tc)	1.3mOhms @ 100A, 10V	3.9V @ 250μA	460 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRFB7434PBF INFINEON	24,000	1725+		預計 16個工作天	核友型號：st49404518	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	195A(Tc)	10820 pF @ 25 V	294W(Tc)	1.6mOhms @ 100A, 10V	3.9V @ 250μA	324 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB7434PBF INFINEON	5			預計 11個工作天	核友型號：st75141353	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	195A(Tc)	10820 pF @ 25 V	294W(Tc)	1.6mOhms @ 100A, 10V	3.9V @ 250μA	324 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB7434PBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st72742486	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	195A(Tc)	10820 pF @ 25 V	294W(Tc)	1.6mOhms @ 100A, 10V	3.9V @ 250μA	324 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB7437PBF INFINEON	50			預計 11個工作天	核友型號：st75141354	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	195A(Tc)	7330 pF @ 25 V	230W(Tc)	2mOhms @ 100A, 10V	3.9V @ 150μA	225 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證	來自供應商的訂	IRFB7437PBF INFINEON	15,320	21+		預計 16個工作天	核友型號：st60358676	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	195A(Tc)	7330 pF @ 25 V	230W(Tc)	2mOhms @ 100A, 10V	3.9V @ 150μA	225 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB7437PBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st70647298	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	195A(Tc)	7330 pF @ 25 V	230W(Tc)	2mOhms @ 100A, 10V	3.9V @ 150μA	225 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 C-1	來自供應商的訂	IRFB7440PBF INFINEON	9,000	2131+	MOQ : 9,000 SPQ : 1	預計 8個工作天	核友型號：st66243084	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	120A(Tc)	4730 pF @ 25 V	143W(Tc)	2.5mOhms @ 100A, 10V	3.9V @ 100μA	135 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB7440PBF INFINEON	100			預計 11個工作天	核友型號：st75141355	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	120A(Tc)	4730 pF @ 25 V	143W(Tc)	2.5mOhms @ 100A, 10V	3.9V @ 100μA	135 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB7446GPBF INFINEON	19			預計 11個工作天	核友型號：st75141356	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	120A(Tc)	3183 pF @ 25 V	99W(Tc)	3.3mOhms @ 70A, 10V	3.9V @ 100μA	93 nC @ 10 V	±20V		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證	來自供應商的訂	IRFB7446PBF INFINEON	45,000	21+		預計 16個工作天	核友型號：st60358679	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	120A(Tc)	3183 pF @ 25 V	99W(Tc)	3.3mOhms @ 70A, 10V	3.9V @ 100μA	93 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB7446PBF INFINEON	7			預計 11個工作天	核友型號：st75141357	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	120A(Tc)	3183 pF @ 25 V	99W(Tc)	3.3mOhms @ 70A, 10V	3.9V @ 100μA	93 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB7530PBF INFINEON	271			預計 11個工作天	核友型號：st75141358	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	60V	6V, 10V	195A(Tc)	13703 pF @ 25 V	375W(Tc)	2mOhms @ 100A, 10V	3.7V @ 250μA	411 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRFB7530PBF INFINEON	4,125	20+		預計 16個工作天	核友型號：st49404523	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	60V	6V, 10V	195A(Tc)	13703 pF @ 25 V	375W(Tc)	2mOhms @ 100A, 10V	3.7V @ 250μA	411 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB7534PBF INFINEON	10			預計 11個工作天	核友型號：st75141359	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	60V	6V, 10V	195A(Tc)	10034 pF @ 25 V	294W(Tc)	2.4mOhms @ 100A, 10V	3.7V @ 250μA	279 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB7537PBF INFINEON	50			預計 11個工作天	核友型號：st75141360	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	60V	6V, 10V	173A(Tc)	7020 pF @ 25 V	230W(Tc)	3.3mOhms @ 100A, 10V	3.7V @ 150μA	210 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRFB7537PBF INFINEON	20,000	21+		預計 16個工作天	核友型號：st49404525	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	60V	6V, 10V	173A(Tc)	7020 pF @ 25 V	230W(Tc)	3.3mOhms @ 100A, 10V	3.7V @ 150μA	210 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB7540PBF INFINEON	7			預計 11個工作天	核友型號：st75141361	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	60V	6V, 10V	110A(Tc)	4555 pF @ 25 V	160W(Tc)	5.1 mOhms @ 65A, 10V	3.7V @ 100μA	130 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB7545PBF INFINEON	86			預計 11個工作天	核友型號：st75141362	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	60V	6V, 10V	95A(Tc)	4010 pF @ 25 V	125W(Tc)	5.9 mOhms @ 57A, 10V	3.7V @ 100μA	110 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRFB7545PBF INFINEON	590	19+		預計 16個工作天	核友型號：st49404526	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	60V	6V, 10V	95A(Tc)	4010 pF @ 25 V	125W(Tc)	5.9 mOhms @ 57A, 10V	3.7V @ 100μA	110 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRFB7546PBF INFINEON	1,000	2021+		預計 16個工作天	核友型號：st49404527	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	60V	6V, 10V	75A(Tc)	3000 pF @ 25 V	99W(Tc)	7.3 mOhms @ 45A, 10V	3.7V @ 100μA	87 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRFB7734PBF INFINEON	13,850	20+		預計 16個工作天	核友型號：st49404528	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	75V	6V, 10V	183A(Tc)	10150 pF @ 25 V	290W(Tc)	3.5mOhms @ 100A, 10V	3.7V @ 250μA	270 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)