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库存类别供应商排名	库存所在位置	型号 / 制造商 / 其他	库存量	生产批次	最低订货数量 / 后续订购数量	预定出货日	资讯核友型号	Manufacturer	Series	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature Range	Applications	Mounting Type	Device Package	Technology	FET Feature
質量保證 B-1	来自供应商的订	IRFZ48NPBF INFINEON	100			预计 11个工作日	核友型号：st75141594	Infineon Technologies	HEXFETR	N-Channel	55V	10V	64A(Tc)	1970 pF @ 25 V	130W(Tc)	14mOhms @ 32A, 10V	4V @ 250μA	81 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRFZ48NSTRLPBF INFINEON	50			预计 11个工作日	核友型号：st75141595	Infineon Technologies	HEXFETR	N-Channel	55V	10V	64A(Tc)	1970 pF @ 25 V	3.8W(Ta), 130W(Tc)	14mOhms @ 32A, 10V	4V @ 250μA	81 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL1004PBF INFINEON	10			预计 11个工作日	核友型号：st75141633	Infineon Technologies	HEXFETR	N-Channel	40V	4.5V, 10V	130A(Tc)	5330 pF @ 25 V	200W(Tc)	6.5mOhms @ 78A, 10V	1V @ 250μA	100 nC @ 4.5 V	±16V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL1404PBF INFINEON	50			预计 11个工作日	核友型号：st75141634	Infineon Technologies	HEXFETR	N-Channel	40V	4.3V, 10V	160A(Tc)	6590 pF @ 25 V	200W(Tc)	4mOhms @ 95A, 10V	3V @ 250μA	140 nC @ 5 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL1404STRLPBF INFINEON	197			预计 11个工作日	核友型号：st75141635	Infineon Technologies	HEXFETR	N-Channel	40V	4.3V, 10V	160A(Tc)	6600 pF @ 25 V	3.8W(Ta), 200W(Tc)	4mOhms @ 95A, 10V	3V @ 250μA	140 nC @ 5 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL1404ZPBF INFINEON	4			预计 11个工作日	核友型号：st75141636	Infineon Technologies	HEXFETR	N-Channel	40V	4.5V, 10V	75A(Tc)	5080 pF @ 25 V	230W(Tc)	3.1mOhms @ 75A, 10V	2.7V @ 250μA	110 nC @ 5 V	±16V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL1404ZSTRLPBF INFINEON	20			预计 11个工作日	核友型号：st75141637	Infineon Technologies	HEXFETR	N-Channel	40V	4.5V, 10V	75A(Tc)	5080 pF @ 25 V	230W(Tc)	3.1mOhms @ 75A, 10V	2.7V @ 250μA	110 nC @ 5 V	±16V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL2203NSTRLPBF INFINEON	6			预计 11个工作日	核友型号：st75141638	Infineon Technologies	HEXFETR	N-Channel	30V	4.5V, 10V	116A(Tc)	3290 pF @ 25 V	3.8W(Ta), 180W(Tc)	7mOhms @ 60A, 10V	3V @ 250μA	60 nC @ 4.5 V	±16V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL2505PBF INFINEON	3,968	23+		预计 16个工作日	核友型号：st76078917	Infineon Technologies	HEXFETR	N-Channel	55V	4V, 10V	104A(Tc)	5000 pF @ 25 V	200W(Tc)	8mOhms @ 54A, 10V	2V @ 250μA	130 nC @ 5 V	±16V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL2910STRLPBF INFINEON	5			预计 11个工作日	核友型号：st75141639	Infineon Technologies	HEXFETR	N-Channel	100V	4V, 10V	55A(Tc)	3700 pF @ 25 V	3.8W(Ta), 200W(Tc)	26mOhms @ 29A, 10V	2V @ 250μA	140 nC @ 5 V	±16V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL2910STRRPBF INFINEON	24			预计 11个工作日	核友型号：st75141640	Infineon Technologies	HEXFETR	N-Channel	100V		55A(Tc)	3700 pF @ 25 V		26mOhms @ 29A, 10V	2V @ 250μA	140 nC @ 5 V				Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL3705NPBF INFINEON	10			预计 11个工作日	核友型号：st75141641	Infineon Technologies	HEXFETR	N-Channel	55V	4V, 10V	89A(Tc)	3600 pF @ 25 V	170W(Tc)	10mOhms @ 46A, 10V	2V @ 250μA	98 nC @ 5 V	±16V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL3705NSTRLPBF INFINEON	807			预计 11个工作日	核友型号：st75141642	Infineon Technologies	HEXFETR	N-Channel	55V	4V, 10V	89A(Tc)	3600 pF @ 25 V	3.8W(Ta), 170W(Tc)	10mOhms @ 46A, 10V	2V @ 250μA	98 nC @ 5 V	±16V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL3705ZPBF INFINEON	3			预计 11个工作日	核友型号：st75141643	Infineon Technologies	HEXFETR	N-Channel	55V	4.5V, 10V	75A(Tc)	2880 pF @ 25 V	130W(Tc)	8mOhms @ 52A, 10V	3V @ 250μA	60 nC @ 5 V	±16V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL3705ZSTRLPBF INFINEON	20			预计 11个工作日	核友型号：st75141644	Infineon Technologies	HEXFETR	N-Channel	55V	4.5V, 10V	75A(Tc)	2880 pF @ 25 V	130W(Tc)	8mOhms @ 52A, 10V	3V @ 250μA	60 nC @ 5 V	±16V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL3713PBF INFINEON	2			预计 11个工作日	核友型号：st75141645	Infineon Technologies	HEXFETR	N-Channel	30V	4.5V, 10V	260A(Tc)	5890 pF @ 15 V	330W(Tc)	3mOhms @ 38A, 10V	2.5V @ 250μA	110 nC @ 4.5 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL3803STRLPBF INFINEON	2			预计 11个工作日	核友型号：st75141646	Infineon Technologies	HEXFETR	N-Channel	30V	4.5V, 10V	140A(Tc)	5000 pF @ 25 V	3.8W(Ta), 200W(Tc)	6mOhms @ 71A, 10V	1V @ 250μA	140 nC @ 4.5 V	±16V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL3803STRRPBF INFINEON	10			预计 11个工作日	核友型号：st75141647	Infineon Technologies	HEXFETR	N-Channel	30V	4.5V, 10V	140A(Tc)	5000 pF @ 25 V	3.8W(Ta), 200W(Tc)	6mOhms @ 71A, 10V	1V @ 250μA	140 nC @ 4.5 V	±16V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL40B209 INFINEON	10			预计 11个工作日	核友型号：st75141648	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	4.5V, 10V	195A(Tc)	15140 pF @ 25 V	375W(Tc)	1.25mOhms @ 100A, 10V	2.4V @ 250μA	270 nC @ 4.5 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL40B212 INFINEON	5			预计 11个工作日	核友型号：st75141649	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	4.5V, 10V	195A(Tc)	8320 pF @ 25 V	231W(Tc)	1.9mOhms @ 100A, 10V	2.4V @ 150μA	137 nC @ 4.5 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL40B215 INFINEON	10			预计 11个工作日	核友型号：st75141650	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	4.5V, 10V	120A(Tc)	5225 pF @ 25 V	143W(Tc)	2.7mOhms @ 98A, 10V	2.4V @ 100μA	84 nC @ 4.5 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL40SC209 INFINEON	5			预计 11个工作日	核友型号：st75141651	Infineon Technologies	StrongIRFET?	N-Channel	40V	4.5V, 10V	478A(Tc)	15270 pF @ 25 V	375W(Tc)	0.8mOhms @ 100A, 10V	2.4V @ 250μA	267 nC @ 4.5 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK-7	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订海外位置	IRL40SC228 INFINEON	30,400	2144+		预计 11个工作日	核友型号：st50400616	Infineon Technologies	StrongIRFET?	N-Channel	40V	4.5V, 10V	557A(Tc)	19680 pF @ 25 V	416W(Tc)	0.65mOhms @ 100A, 10V	2.4V @ 250μA	307 nC @ 4.5 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK(7-Lead)	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL40SC228 INFINEON	7			预计 11个工作日	核友型号：st75141652	Infineon Technologies	StrongIRFET?	N-Channel	40V	4.5V, 10V	557A(Tc)	19680 pF @ 25 V	416W(Tc)	0.65mOhms @ 100A, 10V	2.4V @ 250μA	307 nC @ 4.5 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK(7-Lead)	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL40SC228 INFINEON TECHNOLOGIES	800		MOQ : 800 SPQ : 1	预计 11个工作日	核友型号：st72742503	Infineon Technologies	StrongIRFET?	N-Channel	40V	4.5V, 10V	557A(Tc)	19680 pF @ 25 V	416W(Tc)	0.65mOhms @ 100A, 10V	2.4V @ 250μA	307 nC @ 4.5 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK(7-Lead)	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL520NSTRLPBF INFINEON	1,910			预计 11个工作日	核友型号：st75141654	Infineon Technologies	HEXFETR	N-Channel	100V	4V, 10V	10A(Tc)	440 pF @ 25 V	3.8W(Ta), 48W(Tc)	180mOhms @ 6A, 10V	2V @ 250μA	20 nC @ 5 V	±16V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL530NPBF INFINEON	4			预计 11个工作日	核友型号：st75141655	Infineon Technologies	HEXFETR	N-Channel	100V	4V, 10V	17A(Tc)	800 pF @ 25 V	79W(Tc)	100mOhms @ 9A, 10V	2V @ 250μA	34 nC @ 5 V	±16V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL540NPBF INFINEON	7			预计 11个工作日	核友型号：st75141656	Infineon Technologies	HEXFETR	N-Channel	100V	4V, 10V	36A(Tc)	1800 pF @ 25 V	140W(Tc)	44mOhms @ 18A, 10V	2V @ 250μA	74 nC @ 5 V	±16V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订海外位置	IRL540NPBF INFINEON	2,650	24+		预计 16个工作日	核友型号：st49404758	Infineon Technologies	HEXFETR	N-Channel	100V	4V, 10V	36A(Tc)	1800 pF @ 25 V	140W(Tc)	44mOhms @ 18A, 10V	2V @ 250μA	74 nC @ 5 V	±16V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL540NSTRLPBF INFINEON	2			预计 11个工作日	核友型号：st75141657	Infineon Technologies	HEXFETR	N-Channel	100V	4V, 10V	36A(Tc)	1800 pF @ 25 V	3.8W(Ta), 140W(Tc)	44mOhms @ 18A, 10V	2V @ 250μA	74 nC @ 5 V	±16V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL60SL216 INFINEON	5			预计 11个工作日	核友型号：st75141658	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	60V	4.5V, 10V	195A(Tc)	15330 pF @ 25 V	375W(Tc)	1.95 mOhms @ 100A, 10V	2.4V @ 250μA	255 nC @ 4.5 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-262-3	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL6297SDTRPBF INFINEON	20			预计 11个工作日	核友型号：st75141659	Infineon Technologies	HEXFETR	20 V	15 A	2245pF @ 10V	1.7W	4.9リOhms @ 15A, 4.5V	1.1V @ 35μA	54nC @ 10V	MOSFET (Metal Oxide)	2 Nチャンネル(デュアル)	Logic Level Gate	-40°C ~ 150°C(TJ)		Surface Mount	DIRECTFET? SA
質量保證 B-1	来自供应商的订	IRL6297SDTRPBF INFINEON	48,000	17+		预计 11个工作日	核友型号：st71361840	Infineon Technologies	HEXFETR	20 V	15 A	2245pF @ 10V	1.7W	4.9リOhms @ 15A, 4.5V	1.1V @ 35μA	54nC @ 10V	MOSFET (Metal Oxide)	2 Nチャンネル(デュアル)	Logic Level Gate	-40°C ~ 150°C(TJ)		Surface Mount	DIRECTFET? SA
質量保證 B-1	来自供应商的订	IRL7486MTRPBF INFINEON	27			预计 11个工作日	核友型号：st75141660	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	4.5V, 10V	209A(Tc)	6904 pF @ 25 V	104W(Tc)	1.25mOhms @ 123A, 10V	2.5V @ 150μA	111 nC @ 4.5 V	±20V	-55°C ~ 150°C(TJ)		Surface Mount	DirectFET? Isometric ME	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL7486MTRPBF INFINEON	20,000	21+		预计 11个工作日	核友型号：st71361841	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	4.5V, 10V	209A(Tc)	6904 pF @ 25 V	104W(Tc)	1.25mOhms @ 123A, 10V	2.5V @ 150μA	111 nC @ 4.5 V	±20V	-55°C ~ 150°C(TJ)		Surface Mount	DirectFET? Isometric ME	Mosfet (Metal Oxide)
質量保證	来自供应商的订	IRL7486MTRPBF INFINEON	4,800	25+		预计 16个工作日	核友型号：st60359142	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	4.5V, 10V	209A(Tc)	6904 pF @ 25 V	104W(Tc)	1.25mOhms @ 123A, 10V	2.5V @ 150μA	111 nC @ 4.5 V	±20V	-55°C ~ 150°C(TJ)		Surface Mount	DirectFET? Isometric ME	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL7833PBF INFINEON	9			预计 11个工作日	核友型号：st75141661	Infineon Technologies	HEXFETR	N-Channel	30V	4.5V, 10V	150A(Tc)	4170 pF @ 15 V	140W(Tc)	3.8mOhms @ 38A, 10V	2.3V @ 250μA	47 nC @ 4.5 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL7833STRLPBF INFINEON	20			预计 11个工作日	核友型号：st75141662	Infineon Technologies	HEXFETR	N-Channel	30V	4.5V, 10V	150A(Tc)	4170 pF @ 15 V	140W(Tc)	3.8mOhms @ 38A, 10V	2.3V @ 250μA	47 nC @ 4.5 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRL80HS120 INFINEON	3			预计 11个工作日	核友型号：st75141663	Infineon Technologies	OptiMOS 5	N-Channel	80V	4.5V, 10V	12.5A(Tc)	540 pF @ 25 V	11.5W(Tc)	32mOhms @ 7.5A, 10V	2V @ 10μA	7 nC @ 4.5 V	±20V	-55°C ~ 175°C(TJ)	Standard	Surface Mount	6-PQFN(2x2)(DFN2020)	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRLB3034PBF INFINEON	917			预计 11个工作日	核友型号：st75141664	Infineon Technologies	HEXFETR	N-Channel	40V	4.5V, 10V	195A(Tc)	10315 pF @ 25 V	375W(Tc)	1.7mOhms @ 195A, 10V	2.5V @ 250μA	162 nC @ 4.5 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRLB3036PBF INFINEON	10			预计 11个工作日	核友型号：st75141665	Infineon Technologies	HEXFETR	N-Channel	60V	4.5V, 10V	195A(Tc)	11210 pF @ 50 V	380W(Tc)	2.4mOhms @ 165A, 10V	2.5V @ 250μA	140 nC @ 4.5 V	±16V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)	Standard
質量保證 B-1	来自供应商的订	IRLB3813PBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	预计 11个工作日	核友型号：st70647337	Infineon Technologies	HEXFETR	N-Channel	30V	4.5V, 10V	260A(Tc)	8420 pF @ 15 V	230W(Tc)	1.95mOhms @ 60A, 10V	2.35V @ 150μA	86 nC @ 4.5 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)