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- IPD30N08S2L21ATMA1(INFINEON)
IPD30N08S2L21ATMA1
INFINEON
RoHS状态:RoHS
库存类别:质量保证库存
供应商排名:B-2
Management ID:st76510829
Date Code:22/23+
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产品属性
| Category | 分立半导体 Discrete single |
| Manufacturer | INFINEON |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 75V |
| Current - Continuous Drain (Id) @ 25°C | 4.5V, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 30A (Tc) |
| Power Dissipation (Max) | 1650 pF @ 25 V |
| Rds On (Max) @ Id, Vgs | 136W(Tc) |
| Vgs(th) (Max) @ Id | 20.5mOhms @ 25A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 2V @ 80µA |
| Vgs (Max) | 72 nC @ 10 V |
| Operating Temperature Range | ±20V |
| Applications | -55°C ~ 175°C (TJ) |
| Device Package | Surface Mount |
| Technology | PG-TO252-3-11 |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
库存量: 36,898
MOQ:250
SPQ:1
