QRE1113GR
ON SEMICONDUCTOR
RoHS状态:N/A
库存类别:质量保证库存
供应商排名:B-1
Management ID:st76212428
Date Code:N/A
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文档
产品属性
| Case/Package | SMD/SMT |
| Collector Emitter Breakdown Voltage | 30 V |
| Collector Emitter Voltage (VCEO) | 30 V |
| Contact Plating | Tin |
| Dark Current | 1 nA |
| Fall Time | 20 µs |
| Forward Current | 50 mA |
| Forward Voltage | 1.2 V |
| Height | 1.87 mm |
| Input Current | 50 mA |
| Lead Free | Lead Free |
| Lifecycle Status | Production (Last Updated: 4 years ago) |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 4 years ago) |
| Max Breakdown Voltage | 30 V |
| Max Collector Current | 900 µA |
| Max Operating Temperature | 85 °C |
| Max Power Dissipation | 75 mW |
| Min Operating Temperature | -40 °C |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 4 |
| Operating Supply Voltage | 1.7 V |
| Output Type | Phototransistor |
| Output Voltage | 20 V |
| Packaging | Cut Tape |
| Power Dissipation | 75 mW |
| Radiation Hardening | No |
| REACH SVHC | No |
| Response Time | 20 µs |
| Reverse Breakdown Voltage | 5 V |
| Reverse Voltage (DC) | 5 V |
| Rise Time | 20 µs |
| Schedule B | 8541408000, 8541408000|8541408000, 8541408000|8541408000|8541408000, 8541408000|8541408000|8541408000|8541408000 |
| Sensing Distance | 5.0038 mm |
| Wavelength | 940 nm |
| Weight | 78 mg |
| Width | 2.9 mm |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
库存量: 33,688
MOQ:72
SPQ:1
| 购买数量 | 单价(FOB JAPAN) |
|---|---|
| 72 - 719 | $1.097 |
| 720 - 3,599 | $1.075 |
| 3,600 - 7,199 | $1.038 |
| 7,200 - 35,999 | $1.03 |
| 36,000 - 71,999 | $1.027 |
| 72,000 - 143,999 | $1.024 |
| 144,000 - 287,999 | $1.02 |
| 288,000 - | $1.019 |
