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R8002ANX
ROHM
RoHS状态:RoHS
库存类别:代理店库存
供应商排名:A-2
Management ID:st75181793
Date Code:2012+
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产品属性
| Category | 分立半导体 Discrete single |
| Manufacturer | ROHM |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 2A(Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 210 pF @ 25 V |
| Power Dissipation (Max) | 35W(Tc) |
| Rds On (Max) @ Id, Vgs | 4.3Ohms @ 1A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 12.7 nC @ 10 V |
| Vgs (Max) | ±30V |
| Operating Temperature Range | 150°C(TJ) |
| Mounting Type | Through Hole |
| Device Package | TO-220FM |
| Technology | Mosfet (Metal Oxide) |
| FET Feature | Standard |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
库存量: 200
MOQ:10
SPQ:10
| 购买数量 | 单价(FOB JAPAN) |
|---|---|
| 10 - | $1.758 |
| - | - |
| - | - |
| - | - |
| - | - |
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