产品属性
| Category | 分立半导体 Arrays |
| Manufacturer | TOSHIBA |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 500 mA |
| Input Capacitance (Ciss) (Max) @ Vds | 46pF @ 10V |
| Power - Max | 200mW |
| Rds On (Max) @ Id, Vgs | 630mOhms @ 200mA, 5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate charge (Qg) when Vgs is applied (max) | 1.23nC @ 4V |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 Nチャンネル(デュアル) |
| FET Feature | Logic Level Gate, 1.5V駆動 |
| Operating Temperature Range | 150°C(TJ) |
| Mounting Type | Surface Mount |
| Device Package | US6 |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
