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- RQ6E030ATTCR(ROHM)
RQ6E030ATTCR
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产品属性
| Category | 分立半导体 Discrete single |
| Manufacturer | ROHM |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 3A (Ta) |
| Power Dissipation (Max) | 240 pF @ 15 V |
| Vgs(th) (Max) @ Id | 91mOhms @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5V @ 1mA |
| Vgs (Max) | 5.4 nC @ 10 V |
| Device Package | Surface Mount |
| Technology | SOT-23-6 Thin, TSOT-23-6 |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
