DTDG14GPT100
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产品属性
| Category | 分立半导体 Discrete single Pre-Biased |
| Manufacturer | ROHM |
| Series | - |
| Transistor Type | NPN - Pre-Bias |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Current - Collector Cutoff (Max) | 500 nA(ICBO) |
| Current - Collector (Ic) (Max) | 1.0 A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 500mA/2V |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Resistor - Base (R1) | 10 kOhms |
| Power - Max | 2 W |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA/500mA |
| Product Overview | TRANS PREBIAS NPN 60V 1A MPT3 |
| Mounting Type | Surface Mount |
| Device Package | MPT3 |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
