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SCT3022ALGC11
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产品属性
| Category | 分立半导体 Discrete single |
| Manufacturer | ROHM |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 93A(Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 2208 pF @ 500 V |
| Power Dissipation (Max) | 339W(Tc) |
| Rds On (Max) @ Id, Vgs | 28.6mOhms @ 36A, 18V |
| Vgs(th) (Max) @ Id | 5.6V @ 18.2mA |
| Gate Charge (Qg) (Max) @ Vgs | 133 nC @ 18 V |
| Vgs (Max) | +22V, -4V |
| Operating Temperature Range | 175°C(TJ) |
| Mounting Type | Through Hole |
| Device Package | TO-247N |
| Technology | Sicfet (Silicon Carbide) |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
库存量: 180
MOQ:1
SPQ:1
| 购买数量 | 单价(FOB JAPAN) |
|---|---|
| 1 - 9 | $42.891 |
| 10 - 49 | $37.768 |
| 50 - 99 | $33.928 |
| 100 - 449 | $30.728 |
| 450 - 899 | $25.604 |
| 900 - 2,249 | $23.688 |
| 2,250 - 4,499 | $20.487 |
| 4,500 - | $19.203 |
