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RS1E170GNTB
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产品属性
| Category | 分立半导体 Discrete single |
| Manufacturer | ROHM |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 17A(TA), 40A(Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 720 pF @ 15 V |
| Power Dissipation (Max) | 3W(Ta), 23W(Tc) |
| Rds On (Max) @ Id, Vgs | 6.7mOhms @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Vgs (Max) | ±20V |
| Operating Temperature Range | 150°C(TJ) |
| Mounting Type | Surface Mount |
| Device Package | 8-HSOP |
| Technology | Mosfet (Metal Oxide) |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
库存量: 2,600
MOQ:10
SPQ:10
| 购买数量 | 单价(FOB JAPAN) |
|---|---|
| 10 - 99 | $0.656 |
| 100 - 499 | $0.611 |
| 500 - 999 | $0.573 |
| 1,000 - 2,499 | $0.528 |
| 2,500 - 4,999 | $0.437 |
| 5,000 - 12,499 | $0.407 |
| 12,500 - | $0.354 |
| - | - |
