GP2S700HCP
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产品属性
| Case/Package | SMD/SMT |
| Collector Emitter Breakdown Voltage | 35 V |
| Collector Emitter Voltage (VCEO) | 35 V |
| Contact Plating | Gold |
| Fall Time | 20 µs |
| Forward Current | 50 mA |
| Forward Voltage | 1.2 V |
| Height | 2.3 mm |
| Input Current | 20 mA |
| Isolation Voltage | 5 kV |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 35 V |
| Max Collector Current | 20 mA |
| Max Operating Temperature | 85 °C |
| Min Operating Temperature | -25 °C |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 4 |
| Output Type | Phototransistor |
| Output Voltage | 35 V |
| Packaging | Cut Tape |
| Power Dissipation | 100 mW |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| Response Time | 20 µs |
| Reverse Breakdown Voltage | 6 V |
| Reverse Voltage | 6 V |
| Reverse Voltage (DC) | 6 V |
| Rise Time | 20 µs |
| Sensing Distance | 3 mm |
| Wavelength | 950 nm |
| Width | 4 mm |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
库存量: 8,000
MOQ:1,000
SPQ:1,000
| 购买数量 | 单价(FOB JAPAN) |
|---|---|
| 1,000 - | $6.956 |
| - | - |
| - | - |
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