产品属性
| Category | 分立半导体 Arrays |
| Manufacturer | Texas Instruments |
| Series | NexFET? |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 25 A |
| Input Capacitance (Ciss) (Max) @ Vds | 736pF @ 15V |
| Power - Max | 6W |
| Rds On (Max) @ Id, Vgs | 9.6mOhms @ 15A, 10V |
| Vgs(th) (Max) @ Id | 1.9V @ 250μA |
| Gate charge (Qg) when Vgs is applied (max) | 4.1nC @ 4.5V |
| Technology | MOSFET (Metal Oxide) |
| Configuration | Nチャンネル2個(ハーフブリッジ) |
| FET Feature | Logic Level Gate |
| Operating Temperature Range | -55°C ~ 150°C(TJ) |
| Mounting Type | Surface Mount |
| Device Package | 5-PTAB(3x2.5) |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
