MUN2213T1G
文档
产品属性
| Category | 分立半导体 Discrete single Pre-Biased |
| Manufacturer | ON SEMICONDUCTOR |
| Transistor Type | NPN - Pre-Bias |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Current - Collector Cutoff (Max) | 500 nA |
| Current - Collector (Ic) (Max) | 100 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA/10V |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Resistor - Base (R1) | 47 kOhms |
| Power - Max | 338 mW |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300μA/10mA |
| Product Overview | TRANS PREBIAS NPN 50V 0.1A SC59 |
| Mounting Type | Surface Mount |
| Device Package | SC-59 |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
库存量: 633,000
MOQ:6,000
SPQ:3,000
| 购买数量 | 单价(FOB JAPAN) |
|---|---|
| 6,000 - 35,999 | $0.059 |
| 36,000 - 74,999 | $0.023 |
| 75,000 - 182,999 | $0.022 |
| 183,000 - 380,999 | $0.022 |
| 381,000 - | $0.02 |
| - | - |
| - | - |
| - | - |





