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FDN352AP
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产品属性
| Category | 分立半导体 Discrete single |
| Manufacturer | ON SEMICONDUCTOR |
| Series | PowerTrenchR |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A(TA) |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 15 V |
| Power Dissipation (Max) | 500mW(Ta) |
| Rds On (Max) @ Id, Vgs | 180mOhms @ 1.3A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 1.9 nC @ 4.5 V |
| Vgs (Max) | ±25V |
| Operating Temperature Range | -55°C ~ 150°C(TJ) |
| Mounting Type | Surface Mount |
| Device Package | SOT-23-3 |
| Technology | Mosfet (Metal Oxide) |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
库存量: 2,650
MOQ:474
SPQ:1
| 购买数量 | 单价(FOB JAPAN) |
|---|---|
| 474 - 4,739 | $0.364 |
| 4,740 - 23,699 | $0.363 |
| 23,700 - 47,399 | $0.358 |
| 47,400 - 236,999 | $0.353 |
| 237,000 - 473,999 | $0.352 |
| 474,000 - | $0.352 |
| - | - |
| - | - |
