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- FDN352AP(ON SEMICONDUCTOR)
FDN352AP
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产品属性
| Category | 分立半导体 Discrete single |
| Manufacturer | ON SEMICONDUCTOR |
| Series | PowerTrenchR |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A(TA) |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 15 V |
| Power Dissipation (Max) | 500mW(Ta) |
| Rds On (Max) @ Id, Vgs | 180mOhms @ 1.3A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 1.9 nC @ 4.5 V |
| Vgs (Max) | ±25V |
| Operating Temperature Range | -55°C ~ 150°C(TJ) |
| Mounting Type | Surface Mount |
| Device Package | SOT-23-3 |
| Technology | Mosfet (Metal Oxide) |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
