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- RYC002N05T316(ROHM)
RYC002N05T316
ROHM
RoHS状态:RoHS
库存类别:质量保证库存
供应商排名:A-3
Management ID:st68258578
Date Code:2014
文档
产品属性
| Category | 分立半导体 Discrete single |
| Manufacturer | ROHM |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 50V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 200mA(TA) |
| Input Capacitance (Ciss) (Max) @ Vds | 26 pF @ 10 V |
| Power Dissipation (Max) | 350mW(Tc) |
| Rds On (Max) @ Id, Vgs | 2.2Ohms @ 200mA, 4.5V |
| Vgs(th) (Max) @ Id | 800mV @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | ±8V |
| Vgs (Max) | ±8V |
| Operating Temperature Range | -55°C ~ 150°C(TJ) |
| Mounting Type | Surface Mount |
| Device Package | SST3 |
| Technology | Mosfet (Metal Oxide) |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.





