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- IMW65R027M1HXKSA1(INFINEON)
IMW65R027M1HXKSA1
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产品属性
| Category | 分立半导体 Discrete single |
| Manufacturer | INFINEON |
| Series | CoolSIC? M1 |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 47A(Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 2131 pF @ 400 V |
| Power Dissipation (Max) | 189W(Tc) |
| Rds On (Max) @ Id, Vgs | 34mOhms @ 38.3A, 18V |
| Vgs(th) (Max) @ Id | 5.7V @ 11mA |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 18 V |
| Vgs (Max) | +23V, -5V |
| Operating Temperature Range | -55°C ~ 150°C(TJ) |
| Mounting Type | Through Hole |
| Device Package | PG-TO247-3-41 |
| Technology | Sicfet (Silicon Carbide) |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
库存量: 5
MOQ:1
SPQ:1
| 购买数量 | 单价(FOB JAPAN) |
|---|---|
| 1 - | $23.389 |
| - | - |
| - | - |
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