- Top >
- 半导体 >
- 分立半导体 >
- Transistors -bipolar >
- Arrays >
- IMX25T110(ROHM)
产品属性
| Case/Package | SMD/SMT |
| Collector Base Voltage (VCBO) | 50 V |
| Collector Emitter Breakdown Voltage | 20 V |
| Collector Emitter Saturation Voltage | 50 mV |
| Collector Emitter Voltage (VCEO) | 20 V |
| Continuous Collector Current | 300 mA |
| Element Configuration | Dual |
| Emitter Base Voltage (VEBO) | 25 V |
| Gain Bandwidth Product | 35 MHz |
| hFE Min | 820 |
| Lead Free | Lead Free |
| Lifecycle Status | Production (Last Updated: 4 years ago) |
| Max Breakdown Voltage | 20 V |
| Max Collector Current | 300 mA |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 300 mW |
| Min Operating Temperature | -55 °C |
| Mount | Surface Mount |
| Number of Pins | 6 |
| Number of Terminals | 6 |
| Polarity | NPN |
| Radiation Hardening | No |
| Transition Frequency | 35 MHz |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
